Effect of annealing in N2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD |
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| Authors: | C B Oh J F Wang M Isshiki |
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| Institution: | Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
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| Abstract: | Annealing effect on net acceptor concentration in ZnSe:N is investigated. ZnSe:N homo-epitaxial layer was grown at 823 K by MOCVD using ammonia (NH3) as a dopant source. Photoluminescence (PL) spectra measured on as-grown layer exhibited the strong deep donor–acceptor pair (DdAP) emission and the weak I1N emission line. In order to enhance the activation of nitrogen in ZnSe epitaxial layer, sample was annealed at the 823 K in nitrogen (N2) and hydrogen (H2) atmosphere. Only the annealing in nitrogen atmosphere increased I1N emission intensity indicate the activation of nitrogen acceptor. And net acceptor concentration was estimated to be 3 × 1017cm−3 by C–V measurements. This activation mechanism is interpreted as hydrogen is released from N–H bonds during annealing in nitrogen atmosphere. |
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| Keywords: | ZnSe homoepitaxial layer MOCVD Nitrogen doping Annealing effect N– H bonds Hydrogen passivation |
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