| 射频等离子硫钝化GaAs(100)的表面特性 |
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| 引用本文： | 许留洋,高欣,袁绪泽,夏晓宇,曹曦文,乔忠良,薄报学.射频等离子硫钝化GaAs(100)的表面特性[J].发光学报,2016,37(5):556-560. |
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| 作者姓名： | 许留洋 高欣 袁绪泽 夏晓宇 曹曦文 乔忠良 薄报学 |
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| 作者单位： | 长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022 |
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| 基金项目： | 国家自然科学基金(61176048;61308051)，吉林省科技发展计划(20150203007GX;20130206016GX)，中物院高能激光重点实验室基金(2014HEL01) |
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| 摘 要： | 采用射频等离子方法,对Ga As(100)衬底片表面进行干法硫等离子体钝化,旨在得到性能稳定含硫钝化层。样品经过360℃温度条件下的快速热退火,光致发光(PL)测试表明,钝化后的样品PL强度上升了71%。同时,钝化样品的稳定性测试结果表明,样品放置在实验室空气中30 d,其PL强度未出现明显变化,说明Ga As的等离子体干法硫钝化具有较好的性能稳定性。
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| 关 键 词： | 射频等离子体 光致发光 钝化 GaAs |
| 收稿时间： | 2015-12-23 |
RF Sulfur-plasma Passivation of GaAs(100) Surface |
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| XU Liu-yang,GAO Xin,YUAN Xu-ze,XIA Xiao-yu,CAO Xi-wen,QIAO Zhong-liang,BO Bao-xue.RF Sulfur-plasma Passivation of GaAs(100) Surface[J].Chinese Journal of Luminescence,2016,37(5):556-560. |
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| Authors: | XU Liu-yang GAO Xin YUAN Xu-ze XIA Xiao-yu CAO Xi-wen QIAO Zhong-liang BO Bao-xue |
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| Institution: | State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China |
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| Abstract: | Sulfur-plasma process was proposed to clean and passivate the surface of (100) oriented GaAs wafers for stable sulfur passivation effect. The photoluminescence ( PL) intensity of processed samples with sulfur-plasma had an obvious improvement after 360 ℃ annealing, and 71% higher than the unpassivated sample. The stability of passivation was also tested. There was no obvious PL intensity degradation while the sample stored in open air over a month. The experiment results show that the passivation of GaAs surface treated by sulfur-plasma process has good stability. |
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| Keywords: | RF plasma PL passivation GaAs |
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