| 退火时间对6H-SiC(0001)表面外延石墨烯形貌和结构的影响 |
| |
| 引用本文： | 唐军,刘忠良,康朝阳,闫文盛,徐彭寿,潘海斌,韦世强,高玉强,徐现刚.退火时间对6H-SiC(0001)表面外延石墨烯形貌和结构的影响[J].物理化学学报,2010,26(1):253-258. |
| |
| 作者姓名： | 唐军 刘忠良 康朝阳 闫文盛 徐彭寿 潘海斌 韦世强 高玉强 徐现刚 |
| |
| 作者单位： | National Synchrotron Radiation Laboratory, University of Science&Technology of China, Hefei 230029, P. R. China; School of Physics and Electronic Informantion, Huaibei Coal Industry Teachers College, Huaibei 235000, Anhui Province, P. R. China; State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China |
| |
| 摘 要： | 在分子束外延(MBE)设备中,采用高温退火的方法在6H-SiC(0001)表面外延石墨烯,并研究了退火时间对外延石墨烯形貌和结构的影响.利用反射式高能电子衍射(RHEED)、原子力显微镜(AFM)、激光拉曼光谱(Raman)和近边X射线吸收精细结构(NEXAFS)等实验技术对制备的样品进行了表征.RHEED结果发现,不同退火时间的样品在SiC衍射条纹的外侧都出现了石墨烯的衍射条纹.AFM测试表明,外延石墨烯的厚度随退火时间增加而增大,且样品孔洞减少、表面更加平整.Raman测试表明,外延石墨烯拉曼谱中2D峰和G峰的位置相对高定向热解石墨(HOPG)中2D峰和G峰的位置蓝移,且退火时间增加,峰的蓝移量减小.对样品中碳原子K边NEXAFS谱测量显示,样品中存在sp2杂化的碳原子,退火时间增加使碳原子的1s→π以及1s→σ吸收的强度增大,且1s电子到π态的吸收峰相对HOPG的向高能偏移.
|
| 关 键 词： | Raman 石墨烯 6H-SiC 退火时间 RHEED AFM NEXAFS |
| 收稿时间： | 2009-05-12 |
| 修稿时间： | 2009-10-29 |
Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface |
| |
| TANG Jun,LIU Zhong-Liang,KANG Chao-Yang,YAN Wen-Sheng,XU Peng-Shou,PAN Hai-Bin,WEI Shi-Qiang,GAO Yu-Qiang,XU Xian-Gang.Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface[J].Acta Physico-Chimica Sinica,2010,26(1):253-258. |
| |
| Authors: | TANG Jun LIU Zhong-Liang KANG Chao-Yang YAN Wen-Sheng XU Peng-Shou PAN Hai-Bin WEI Shi-Qiang GAO Yu-Qiang XU Xian-Gang |
| |
| Institution: | National Synchrotron Radiation Laboratory, University of Science&Technology of China, Hefei 230029, P. R. China; School of Physics and Electronic Informantion, Huaibei Coal Industry Teachers College, Huaibei 235000, Anhui Province, P. R. China; State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China |
| |
| Abstract: | Epitaxial graphene layers were successfully grown onto Si-terminated 6H-SiC(0001) substrates by thermal annealing using an ultrahigh vacuum molecular beam epitaxy(MBE) chamber.The morphology and structure of the samples annealed for different time were characterized by reflection high energy diffraction(RHEED),Raman spectro-scopy,atomic force microscopy(AFM) and near edge X-ray absorption fine structure spectroscopy(NEXAFS).The graphene diffraction steaks were found in the RHEED patterns for all samples.AFM... |
| |
| Keywords: | Raman 6H-SiC RHEED AFM NEXAFS Raman Graphene 6H-SiC Annealing time RHEED AFM NEXAFS |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理化学学报》浏览原始摘要信息 |
| 点击此处可从《物理化学学报》下载免费的PDF全文 |
|
