| Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R |
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| 作者姓名： | 郑凯 马骁宇 林涛 王俊 刘素平 张广泽 |
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| 作者单位： | National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 60236030. |
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| 摘 要： |
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| 关 键 词： | 激光二极管 半导体 电子元器件 光学损伤 击穿电流 |
| 收稿时间： | 2005-01-25 |
| 修稿时间： | 2005-01-25 |
Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R |
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| Zheng Kai;Ma XiaoYu;Lin Tao;Wang Jun;Liu SuPing;Zhang GuangZe.Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R[J].Chinese Physics Letters,2005,22(9):2269-2272. |
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| Authors: | Zheng Kai;Ma XiaoYu;Lin Tao;Wang Jun;Liu SuPing;Zhang GuangZe |
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| Abstract: | We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80roW without kinks, and the maximum output power was 184roW at 22~C. The threshold current was 40 mA. |
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