Temperature dependent photoluminescence from ZnO/MgZnO multiple quantum wells grown by pulsed laser deposition |
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Authors: | P Misra TK Sharma LM Kukreja |
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Institution: | aThin film Laboratory, Raja Ramanna Center for Advanced Technology, Indore 452 013, India;bSemiconductor Laser Section, Raja Ramanna Center for Advanced Technology, Indore 452 013, India |
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Abstract: | We have studied temperature dependent photoluminescence (PL) from ZnO Multiple Quantum Wells (MQWs) of different well layer thicknesses in the range 1–4 nm grown on (0001) sapphire by a novel in-house developed buffer assisted pulsed laser deposition. At 10 K the PL peak shifted toward blue with decreasing well layer thickness and at constant well layer thickness the PL peak shifted towards red with increasing temperature. To the best of our knowledge we have observed for the first time an efficient room temperature (RT) PL emanating from such MQWs. The red shift of the PL peak with increasing temperature has been found to be due to the band gap shrinkage in accordance with the Varshni’s empirical relation. The spectral linewidth was found to increase with increasing temperature due to the scattering of excitons with acoustic and optical phonons in different temperature regimes. Both at RT and at 10 K the PL peak shifted with respect to the well layer thickness in the range of 3.35–3.68 eV with decreasing thickness in agreement with the calculated values. |
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Keywords: | Multiple quantum wells II– VI oxide semiconductors ZnO Photoluminescence |
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