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Influence of annealing temperature on the properties of ZnO thin films deposited by thermal evaporation |
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| Authors: | N Bouhssira E Tomasella A Mosbah MS Aida M Jacquet |
| Institution: | a Laboratoire de Couches Minces et Interfaces, Faculté des Sciences, Université de Constantine, 25000 Constantine, Algeria b Laboratoire des Matériaux Inorganiques, UMR CNRS 6002, Université Clermont-Ferrand (Blaise Pascal), 24 Avenue des Landais, 63177 Aubière Cedex, France c Département de Physique, Faculté des Sciences, Université Farhat Abbas, 19000 Setif, Algeria |
| Abstract: | ZnO thin films were deposited by thermal evaporation of a ZnO powder. The as-deposited films are dark brown, rich zinc and present a low transmittance. Then, these films were annealed in air atmosphere at different temperatures between 100 and 400 °C. Their microstructure and composition were studied using XRD and RBS measurements respectively. By increasing the temperature, it was found that film oxidation starts at 250 °C. XRD peaks related to ZnO appear and peaks related to Zn decrease. At 300 °C, zinc was totally oxidised and the films became totally transparent. The electrical conductivity measurement that were carried out in function of the annealing temperature showed the transition from highly conductive Zn thin film to a lower conductive ZnO thin film. The optical gap (Eg) was deduced from the UV-vis transmittance, and its variation was linked to the formation of ZnO. |
| Keywords: | 61 10 Nz 73 61 &minus r |
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