| 分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究 |
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| 引用本文： | 苑进社,陈光德,齐鸣,李爱珍,徐卓.分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究[J].物理学报,2001,50(12):2429-2433. |
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| 作者姓名： | 苑进社 陈光德 齐鸣 李爱珍 徐卓 |
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| 作者单位： | (1)西安交通大学电子材料研究所,西安710049; (2)西安交通大学应用物理系,西安710049; (3)西安交通大学应用物理系,西安710049,西安理工大学应用物理系,西安710048; (4)中国科学院上海冶金研究所,上海200050 |
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| 基金项目： | 国家自然科学基金(批准号:19874049)资助的课题. |
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| 摘 要： | 用XPS和AES电子能谱的方法对等离子体辅助分子束外延(MBE)生长的GaN薄膜进行了表面分析和深度剖析.发现红外分子束外延(RFMBE)生长的富镓GaN薄膜实际表面存在O和C吸附层,C主要为物理吸附,而O在GaN表面形成局域化学键产生氧络合物覆盖层,并形成一定的深度分布.杂质O在GaN带隙中导带底形成杂质带同时引入深受主能级,使得带隙变窄室温光吸收谱向低能方向移动,光致发光谱出现宽带发光峰.从而影响GaN薄膜的电学和光学性质
关键词：
GaN薄膜
X射线光电子能谱
俄歇电子能谱
表面分析
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| 关 键 词： | GaN薄膜 X射线光电子能谱 俄歇电子能谱 表面分析 |
| 文章编号： | 1000-3290/2001/50(12)2429-05 |
| 收稿时间： | 2001-02-25 |
| 修稿时间： | 2001年2月25日 |
XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE |
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| YUAN JIN-SHE,CHEN GUANG-DE,QI MING,LI AI-ZHEN and XU ZHUO.XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE[J].Acta Physica Sinica,2001,50(12):2429-2433. |
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| Authors: | YUAN JIN-SHE CHEN GUANG-DE QI MING LI AI-ZHEN and XU ZHUO |
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| Abstract: | The surface composition of GaN grown by plasma-assisted MBE was investigated using X-ray photoelectron spectroscopy and Auger election emission spectroscopy(AES), while the depth profile was analyzed by AES with Ar iron sputtering. The experimental results indicated that unintentional doped semi-in salating films formed by plasma-assisted MBE had a rich-gallium surface. It was found that the impurity carbon was chiefly adsorbed onto the surface while oxygen diffused into the bulk to distribute in a certain depth. Consequently, the oxygen-related impurity band and an acceptor level could be simultaneously formed in the layer. This influenced the optical and electrical properties of the films. |
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| Keywords: | GaN film XPS AES surface analysis |
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