V:YAG – a new passive Q-switch for diode-pumped solid-state lasers |
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| Authors: | AM Malyarevich IA Denisov KV Yumashev VP Mikhailov RS Conroy BD Sinclair |
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| Institution: | (1) International Laser Center, 65/17 F. Skaryna Ave., 220027 Minsk, Belarus, BY;(2) J.F. Allen Research Laboratories, School of Physics and Astronomy, University of St Andrews, St Andrews, Scotland, KY16 9SS, UK, UK |
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| Abstract: | gsa =3.0×10-18 cm2 and σesa=1.4×10-19 cm2 at 1064 nm, and σgsa=7.2×10-18 cm2 and σesa=7.4×10-19 cm2 at 1342 nm. Q-switched operation was demonstrated at 1064 nm and 1342 nm from a Nd:YVO4 microchip laser, producing pulses as short as 9.3 ns at 1342 nm with peak powers of 350 W.
Received: 17 March 1998/Revised version: 8 June 1998 |
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| Keywords: | PACS: 42 55 Xi 42 60 Gd |
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