On the short-range order of the SiOx (0 ≤ x ≤ 2) surface |
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Authors: | O Bondarchuk S Goysa I Koval P Melnik M Nakhodkin |
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Institution: | Department of RadioPhysics, University of Kiev, Volodymerska Str. 64, Kiev, Ukraine |
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Abstract: | Fine (oscillating) structure (FS) in the elastically scattered electron spectra (ESES) O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Sci. 258 (1991) 239; O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Rev. Lett. 4 (1997) 965] was used to investigate surface structure of the SiOx (0 ≤ x ≤ 2). SiOx surface with different stoichiometry was prepared by implantation of 500 eV oxygen ions into a silicon wafer. Fourier transformation of the FS ESES contains one peak at 2.32 Å for Si, two peaks at 1.62 Å and 2.65 Å for a-SiO2 and three peaks centered at 1.6-1.7 Å, 2.1-2.2 Å and 2.65-3.04 Å for SiOx. Peaks at 1.62 Å and 2.65 Å are assigned to Si-O and O-O nearest distances correspondently. Ratio of the area under the peak at 2.65 Å to the area under the peak at 1.62 Å turned out to be not constant but grows linearly with the composition parameter x. The latter is considered to prove validity of the Random Bond Model to describe short-range order on the surface of non-stoichiometric silicon oxide. |
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Keywords: | 68 49 Jk 68 35 bj 6143 Dq |
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