| Quadratic nonlinear response to 1.56-μm continuous wave laser in semi-insulating GaAs |
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| 引用本文： | 陈占国,刘秀环,李一,李明利,贾刚,高延军,侯丽新,冯双,李鑫璐,王琦.Quadratic nonlinear response to 1.56-μm continuous wave laser in semi-insulating GaAs[J].Chinese Optics Letters,2013(11):87-90. |
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| 作者姓名： | 陈占国 刘秀环 李一 李明利 贾刚 高延军 侯丽新 冯双 李鑫璐 王琦 |
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| 基金项目： | This work was supported by the Natural Science Foundation of Jilin Province （Nos. 201215019 and 201115026）, the Collaborative Project of NSFC-RFBR （No. 61111120097）, and the National Natural Science Foundation of China （Nos. 60976037 and 61077026）. |
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| 摘 要： | The nonlinear photoresponse to a 1.56μm infrared continuous wave laser in semi-insulating （SI） galliu- marsenide （GaAs） is examined. The double-frequency absorption （DFA） is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the Dhotocurrent and dark current
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| 关 键 词： | 连续波激光器 非线性响应 GaAs 半绝缘 表面电场 DFA 偏置电压 电场诱导 |
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