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Superhydrophilic stability enhancement of RF co-sputtered TixSi1−xO2 thin films in dark
Authors:M Mirshekari  AZ Moshfegh
Institution:a Department of Physics, Sharif University of Technology, PO Box 11155-9161, Tehran, Iran
b Institute of Physics, Malek-Ashtar University of Technology, Tehran, Iran
c Institute for Nanoscience and Nanotechnology, Sharif University of Technology, PO Box 14588-89694, Tehran, Iran
Abstract:TixSi1−xO2 compound thin-film systems were deposited by reactive RF magnetron co-sputtering technique. The effect of Ti concentration on the hydrophilicity of TixSi1−xO2 compound thin films was studied and it was shown that the films with Ti0.6Si0.4O2 composition possess the best hydrophilic property among all the grown samples. Surface ratio and average roughness of the thin films were measured by atomic force microscopy (AFM). Surface chemical states and stoichiometry of the films were determined by X-ray photoelectron spectroscopy (XPS). In addition, XPS revealed that the amount of Ti-O-Si bonds in nanometer depth from the surface of the Ti0.6Si0.4O2 films was the maximum, which resulted in the most stable superhydrophilic property. According to XRD data analysis for the pure TiO2 films, the polycrystalline anatase phase was formed with an average grain size of about 15 nm. Moreover, amorphous phase was also formed for the TixSi1−xO2 compound systems due to presence of silicon in the films. Finally, optical properties of the films such as transmission, reflection and band gap energy were investigated using UV-vis spectrophotometry. It was found that the transmittance of the films was decreased with increasing Ti concentration in the films.
Keywords:82  30  Rs  81  20  Fw
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