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MBE growth of ZnSe nanowires on oxidized silicon substrate |
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| Authors: | CH Hsiao SJ Chang SB Wang SC Hung SP Chang TC Li WJ Lin BR Huang |
| Institution: | 1. Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advance Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;2. Department of Information Technology & Communication, Shih Chien University, Neimen, Kaohsiung 845, Taiwan;3. Materials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan 325, Taiwan;4. Graduate Institute of Electro-Optical Engineering, Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan |
| Abstract: | We report the growth of single crystalline ZnSe nanowires on oxidized Si(100) substrates by molecular-beam epitaxy using Au nano-particles as the catalysts. It was found that average length decreased while the average diameter increased as we increased the temperature from 230 to 320 °C. It was also found that crystal quality of the ZnSe nanowires prepared at 320 °C was poorer than the ZnSe nanowires prepared at 230 °C and 280 °C. |
| Keywords: | ZnSe Nanowires Zinc-blende MBE |
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