Characteristics of SrBi2Ta2O9 ferroelectric films on GaAs with a TiO2 buffer layer |
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Authors: | XH Liu ZG Liu YP Wang T Zhu JM Liu |
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Institution: | (1) Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China, CN |
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Abstract: | Mainly 115]-oriented SrBi2Ta2O9 (SBT) films were prepared on GaAs(100) substrates with TiO2 buffer layers. Both the SBT films and the TiO2 buffer layers were deposited by pulsed laser deposition (PLD) using a KrF excimer laser. The depth profile of the constituent
elements observed by Auger electron spectrometry (AES) shows no remarkable diffusion at both the interfaces between SBT and
TiO2 and between TiO2 and the GaAs substrate. The electrical characteristics of the Pt/SBT/TiO2/GaAs(100) structures show a ferroelectric hysteresis loop with a small remanent polarization (∼0.5 μC/cm2).
Received: 1 March 2002 / Accepted: 3 March 2002 / Published online: 10 September 2002
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ID="*"Corresponding author. Fax: +86-25/3595535, E-mail: xhliu81@hotmail.com
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ID="**"Present address: Data Storage Institute, DSI Building, 5, Engineering Drive 1 (off Kent Ridge Crescent, NUS) 117608
Singapore |
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Keywords: | PACS: 73 40 Qv 77 84 -s 77 90 +k 81 15 Fg 85 50 Gk |
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