Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber |
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Authors: | Lei Pan Xueyuan Hou Yufei Li Yuming Sun |
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Institution: | Information Science & Engineering College, Shandong University, Jinan, 250100, People's Republic of China |
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Abstract: | A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed. |
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Keywords: | Xenon lamp Passively Q-switched Nd:GdVO4 GaAs |
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