High frequency noise of epitaxial graphene grown on sapphire |
| |
| Authors: | L Ardaravicˇius J Liberis E Šermukšnis A Matulionis J Hwang J Y Kwak D Campbell H A Alsalman L F Eastman M G Spencer |
| |
| Institution: | 1. Fluctuation Research Laboratory, Center for Physical Sciences and Technology, A. Go?tauto 11, 01108 Vilnius, Lithuania;2. School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA |
| |
| Abstract: | Microwave noise technique is applied to study in‐plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected to high electric field applied in the plane. The noise spectrum is measured in the field direction at room temperature. While a 1/f1.25‐type dependence is observed in the 200 MHz–2.5 GHz band, a shot noise contribution is resolved at 10 GHz. The shot noise is possibly associated with hole jumps across the potential barriers located in the graphene layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
| Keywords: | epitaxial graphene MOCVD contact resistance sapphire holes microwave frequencies shot noise |
|
|
