| GaAs(001)表面外延生长Mn薄膜的XPS研究 |
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| 引用本文： | 徐敏,朱兴国,张明,董国胜,金晓峰.GaAs(001)表面外延生长Mn薄膜的XPS研究[J].物理学报,1996,45(7):1178-1184. |
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| 作者姓名： | 徐敏 朱兴国 张明 董国胜 金晓峰 |
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| 作者单位： | 复旦大学李政道物理学综合实验室,应用表面物理国家重点实验室,上海200433;浙江工业大学基础部,杭州310014;复旦大学李政道物理学综合实验室,应用表面物理国家重点实验室,上海200433;复旦大学李政道物理学综合实验室,应用表面物理国家重点实验室,上海200433;复旦大学李政道物理学综合实验室,应用表面物理国家重点实验室,上海200433 |
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| 基金项目： | 国家自然科学基金资助的课题 |
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| 摘 要： | 利用x射线光电子能谱的深度剖面技术,对不同衬底温度下分子束外延生长的Mn薄膜及其与GaAs(001)衬底间的界面进行了元素组分和化学结合状态随深度变化的研究。实验发现衬底温度等于400K时制备的fcc-Mn/GaAs(001)体系中,fcc-Mn层与GaAs衬底之间存在一层较厚的Mn-Ga-As的缓冲层;衬底温度等于300K(室温)时制备的a-Mn/GaAs(001)体系中也存在类似的缓冲层,但它的厚度与fcc-Mn的情形相比要小得多;而当衬底温度等于450K时制备的体系在GaAs衬底之上全部是Mn-Ga
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| 关 键 词： | 砷化镓 外延生长 锰 薄膜 |
| 收稿时间： | 4/3/1995 12:00:00 AM |
AN XPS STUDY OF Mn THIN FILMS GROWN ON GaAs(001l) SURFACE |
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| XU MIN,ZHU XING-GUO,ZHANG MING,DONG GUO-SHENG and JIN XIAO-FENG.AN XPS STUDY OF Mn THIN FILMS GROWN ON GaAs(001l) SURFACE[J].Acta Physica Sinica,1996,45(7):1178-1184. |
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| Authors: | XU MIN ZHU XING-GUO ZHANG MING DONG GUO-SHENG and JIN XIAO-FENG |
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| Abstract: | The composition depth profiles of the Mn thin films grown on GaAs(00l) surface using MBE technique are studied with X-ray photoelectron spectroscopy(XPS) . The experimental results show that the fcc-Mn/GaAs(001) system grown on a 400 K substrate has a sandwich structure with a Mn-Ga-As buffer layer located between the fcc-Mn layer and the GaAs substrate; the α-Mn/GaAs (001) system grown on a 300 K substrate also has a similar buffer layer which is much thinner than that of the fcc-Mn/GaAs(001) system;and the system grown on a 450 K substrate is a Mn-Ga-As alloy beyond the GaAs substrate and it has no Mn-dominated area. It is concluded that to keep the substrate at a proper temperature(400 K) during growth to obtain a suitable thickness of buffer layer is an essential requirement to grow fcc-Mn on GaAs(00l) surface. |
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