AlInGaN材料的生长及其光学性质的研究

研究AlInGaN材料的生长特性及其光学性质.通过对不同生长温度生长的三个AlInGaN样品的 测量，发现In的掺入量随着生长温度的降低而增加，而Al的掺入几乎没什么变化；在较低温 度下生长的材料具有较好的材料质量与光学特性，其原因直接与In组分的掺入有关，In组分 的掺入可以减少材料的缺陷，改善材料的质量.同时，用时间分辨光谱研究了AlInGaN材料的 发光机理，发现其发光强度随时间变化（荧光衰退寿命）不是指数衰减，而是一种伸展的指 数衰减.通过对这种伸展的指数衰减特性的研究，发现AlInGaN发光来自 关键词： AlInGaN MOCVD 局域激子 量子点

A study of the growth and optical properties of AlInGaN alloys

We have studied the growth and optical properties of AlInGaN alloys in this arti cle. By the measurement of three samples, we found that the incorporation of In decreases with the increase of temperature, while there is nearly no change for the incorporation of Al. The sample grown at the lowest temperature had the best material and optical properties, which owes to the high In component, because t he In component can reduce defects and improve the material quality. We also use d the time_resolved photoluminescence(PL) to study the mechanism of recombinatio n of carriers, and found that the time dependence of PL intensity was not in exp onential decay, but in stretched_exponential decay. Through the study of the cha racter of this decay, we come to the conclusion that the emission comes from the recombination of localized excitons. Once more, this localization exhibites the character of quantum dots, and the stretched_exponential decay results from the hopping of carriers between different localized states. In addition, we have u sed the relation of emission energy dependence of carrier's lifetime and the cha racter of radiative recombination and non_radiative combination to confirm our c onclusion.