Luminescence enhancement by hydrogenation of Si:Er,O |
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Authors: | G Kocher-Oberlehner W Jantsch L Palmetshofer A Ulyashin |
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Institution: | a University of Linz, Altenbergerstrasse 69, A-4040, Linz, Austria;b University of Hagen, Haldener Str. 182, P.O. Box 940, D-58084, Hagen, Germany |
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Abstract: | Erbium (Er)- and oxygen (O)-doped Cz–Si was additionally doped with hydrogen, using plasma enhanced chemical vapour deposition. Photoluminescence (PL) spectra show a large enhancement especially for samples treated with solid phase epitaxy before hydrogenation and annealing at 900°C later. Secondary ion mass spectroscopy measurements give evidence for an enhanced diffusion of O and Er at this temperature towards the surface. Etching shows that the PL does not stem from the heavily doped surface layer but from a deeper region with lower Er concentration. This conclusion is supported by the appearance of the so-called “cubic” centre with low solubility. Comparing the PL yield of the hydrogenated samples to that of samples with similar Er volume concentration but without hydrogenation still gives a large enhancement. We thus conclude that hydrogen can enhance the solubility of the cubic centre in Si:Er,O. |
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Keywords: | Erbium in Si Photoluminescence 1 5 μ m emission |
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