Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal-organic chemical vapor deposition |
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Authors: | Xiangping Li Xin Dong Xiaochuan Xia Guotong Du |
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Institution: | a State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People's Republic of China b State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, People's Republic of China |
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Abstract: | Heterojunction light-emitting diodes with ZnO/Si structure were fabricated on both high-resistivity (p) and low-resistivity (p+) Si substrates by metal-organic chemical vapor deposition technology. Fairly good rectifications were observed from the current-voltage curves of both heterojunctions. Ultraviolet (UV) and blue-white electroluminescence (EL) from ZnO layer were observed only from ZnO/p+-Si heterojunction under forward bias at room temperature (RT), while strong infrared (IR) EL emissions from Si substrates were detected from both ZnO/p-Si and ZnO/p+-Si heterojunctions. The UV and IR EL mechanisms have been explained by energy band structures. The realization of RT EL in UV-visible and IR region on Si substrate has great applicable potential for Si-based optoelectronic integrated circuits. |
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Keywords: | 78 55 Et 78 60 Fi 81 05 Dz 81 15 Gh |
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