| Vortex domain structures and dc currentdependence of magneto-resistances in magnetic tunnel junctions |
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| 引用本文： | 魏红祥,路庆凤,赵素芬,张谢群,丰家峰,韩秀峰.Vortex domain structures and dc currentdependence of magneto-resistances in magnetic tunnel junctions[J].中国物理 B,2004,13(9):1553-1559. |
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| 作者姓名： | 魏红祥 路庆凤 赵素芬 张谢群 丰家峰 韩秀峰 |
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| 作者单位： | (1)Department of Physics and Communication, Henan Normal University, Xinxiang 453002, China; (2)Department of Physics and Communication, Henan Normal University, Xinxiang 453002, China; State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (3)State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| 基金项目： | Project supported by the "Hundred Talents Project" of Chinese Academy of Sciences and in part by the State Key Program of Basic Research of China (Grant No 2001CB610601) the National Natural Science Foundation of China (Grant No 10274103). |
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| 摘 要： | Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni_{79}Fe_{21} (25nm)/Ir_{22}Mn_{78} (12nm)/Co_{75}Fe_{25} (4nm)/Al(0.8nm) oxide/Co_{75}Fe_{25} (4nm)/Ni_{79}Fe_{21} (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.
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| 关 键 词： | 磁隧道结 涡流区域结构 自旋电子传输 隧道磁阻 铁磁电极 磁性材料 |
| 收稿时间： | 2004-04-13 |
Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions |
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| Wei Hong-Xiang,Lu Qing-Feng,Zhao Su-Fen,Zhang Xie-Qun,Feng Jia-Feng and Han Xiu-Feng.Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions[J].Chinese Physics B,2004,13(9):1553-1559. |
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| Authors: | Wei Hong-Xiang Lu Qing-Feng Zhao Su-Fen Zhang Xie-Qun Feng Jia-Feng and Han Xiu-Feng |
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| Institution: | Department of Physics and Communication, Henan Normal University, Xinxiang 453002, China; State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni_{79}Fe_{21} (25nm)/Ir_{22}Mn_{78} (12nm)/Co_{75}Fe_{25} (4nm)/Al(0.8nm) oxide/Co_{75}Fe_{25} (4nm)/Ni_{79}Fe_{21} (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing. |
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| Keywords: | magnetic tunnel junction tunnel magnetorisistance spin-electron transport magnon-assisted tunnelling vortex domain structure |
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