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Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4 |
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| Authors: | J Ohta K Mitamura T Honke M Oshima |
| Institution: | a Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505, Japan b Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki-shi, Kanagawa 213-0012, Japan c Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan |
| Abstract: | We have grown InN films on nearly lattice-matched (Mn,Zn)Fe2O4 (111) substrates at low temperatures by pulsed laser deposition (PLD) and investigated their structural properties. InN films grown at substrate temperatures above 400 °C show poor crystallinity, and their in-plane epitaxial relationship is 10-10]InN//11-2](Mn,Zn)Fe2O4, which means that their lattice mismatch is quite large (11%). By contrast, high quality InN films with flat surfaces can be grown at growth temperatures lower than 150 °C with the ideal in-plane epitaxial relationship of 11-20]InN//11-2](Mn,Zn)Fe2O4, which produces lattice mismatches of as low as 2.0%. X-ray reflectivity measurements have revealed that the thickness of the interfacial layer between the InN and the substrates is reduced from 14 to 8.4 nm when the growth temperature is decreased from 400 °C to room temperature. This suppression of the interface reactions by reducing the growth temperature is probably responsible for the improvement in crystalline quality. These results indicate that the use of (Mn,Zn)Fe2O4 (111) substrates at low growth temperatures allows us to achieve nearly lattice matched epitaxial growth of InN. |
| Keywords: | 68 35 Ct 68 55 &minus a 81 05 Ea 81 15 Fg |
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