| 掺铁InP肖特基势垒增强InGaAs MSM光电探测器 |
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| 引用本文： | 张永刚,单宏坤,周平,富小妹,潘慧珍.掺铁InP肖特基势垒增强InGaAs MSM光电探测器[J].光子学报,1995(3). |
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| 作者姓名： | 张永刚 单宏坤 周平 富小妹 潘慧珍 |
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| 作者单位： | 中国科学院上海治金研究所微电子学分部 |
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| 摘 要： | 采用ＬＰ－ＭＯＶＰＥ方法及常规器件工艺制成了ＩｎＰ：Ｆｅ肖特基势垒增强ＩｎＧａＡｓＭＳＭ光电探测器。用自建测试系统对其直流和瞬态特性进行了测试，测试结果表明，器件的击穿电压大于１０Ｖ，２Ｖ偏压下暗电流为１７０ｎＡ，对应的暗电流密度约为３ｍＡ／ｃｍ２；瞬态响应中上升时间ｔｒ为２１ｐｓ，半高宽ＦＷＨＭ为７５ｐｓ。
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| 关 键 词： | 光电探测器 光电集成 金属有机物气相外延 |
InGaAs MSM PHOTODETECTORS WITH InP:Fe BARRIER ENHANCEMENT LAYER |
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| Zhang Yonggang,Shan Hongkun,Zhou Ping,Fu Xiaomei,Pan Huizhen Microelectronics Branch.InGaAs MSM PHOTODETECTORS WITH InP:Fe BARRIER ENHANCEMENT LAYER[J].Acta Photonica Sinica,1995(3). |
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| Authors: | Zhang Yonggang Shan Hongkun Zhou Ping Fu Xiaomei Pan Huizhen Microelectronics Branch |
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| Institution: | Zhang Yonggang,Shan Hongkun,Zhou Ping,Fu Xiaomei,Pan Huizhen Microelectronics Branch,Shanghai Institute of Metallurgy,Academia Sinica. Shanghai 2002 33 |
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| Abstract: | The InGaAs MSM photodetectors with InP:Fe barrier enhancement layer have beenfabricated by using LP-MOVPE growth and normal device processing. The detectors show breakdownvoltage greater than 10V and dark current about 170nA at 2V bias(3mA/cm2).The rise time of 21psand FWHM of 75ps have been measured by using a self built transient measurement system. |
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| Keywords: | Photodetectors OEIC MOVPE |
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