Giant Temperature Coefficient of Resistance in ZnO/Si (111) Thin Films |
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引用本文: | 周小芳,张辉,李勇,唐晓东,陈清明,张鹏翔.Giant Temperature Coefficient of Resistance in ZnO/Si (111) Thin Films[J].中国物理快报,2010(1):257-259. |
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作者姓名: | 周小芳 张辉 李勇 唐晓东 陈清明 张鹏翔 |
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作者单位: | [1]Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming 650051 [2]Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241 |
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基金项目: | The Shanghai Shuguang Project under Grant No 06SG30. |
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摘 要: | Giant negative temperature coefficient of resistance (TCR) was observed in ZnO/Si (111) thin films. The films were grown using the pulsed laser deposition (PLD) technique, taking Si (111) wafer as substrates, with a substrate at the temperature below 450°C in the PLD. It is found that both TCR-temperature behavior and TCR value are strongly affected by deposition temperature. The maximal TCR value over -10.9%K-1 can be observed at the deposition temperature from 20°C to 350°C and reaches to -13%K-1 at deposition temperature 20°C where the film shows X-ray diffraction amorphous. The results suggest that the ZnO/Si films demonstrate great potentials when used in a low-cost, high-performance, non-cooling and highly sensitive bolometer.
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关 键 词: | 负电阻温度系数 薄膜生长 氧化锌 脉冲激光沉积 沉积温度 T细胞受体 测辐射热计 TCR |
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