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CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties 下载免费PDF全文
Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure. 相似文献
3.
Measurements of the Cross-sections of Produced Short-Lived Nuclei Induced by Neutrons around 14 MeV on Isotopes of Tungsten 下载免费PDF全文
New experimental cross-section data for the180 W(n,2 n)179 mW,186 W(n,2 n)185 mW and186 W(n,p)186 Ta reactions at the neutron energies of 13.5 and 14.4 MeV are obtained by the activation technique. The neutron beams are produced by means of the3 H(d,n)4 He reaction. The gamma activities of the product nuclei are measured by a high-resolution gamma-ray spectrometer with a coaxial high-purity germanium detector. The neutron fluence is determined using the monitor reaction93 Nb(n,2 n)92 mNb. The results in the current work are discussed and compared with the measurement results found in the literature. It is shown that these higher accuracy experimental cross-section data around the neutron energy of 14 MeV agree with some previous experimental values from the literature within experimental uncertainties. 相似文献
5.
本文提出了一套适用于在低频段区间工作的声学超材料俘能装置。通过在含孔的声学超材料结构中制造一个局域共振缺陷态,进而将入射声波的弹性应变能集中在缺陷区域中,并利用压电晶片实现能量的转化。本文采用有限元的方法研究了元胞含孔的声学超材料在共振频率下俘获功率与电压的性能。进一步地,通过逐渐改变孔的尺寸,探究了孔径大小对俘能效果的影响。数值计算结果表明:相比于元胞不含孔的声学超材料俘能装置,通过在元胞上打孔可以明显地提高装置在低频段的俘能特性。本文提出的装置具有易加工,实用性强等优点,进一步提高了其在低频区间俘能的工作能力,具有潜在的应用前景。 相似文献
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利用温度梯度法,在6.5 GPa、1 300~1 350℃的高温高压极端物理条件下,通过在FeNiCo-C合成体系中添加硫脲(CH4N2S)成功合成了金刚石,所合成的晶体呈现出黄色且具有六-八面体形貌.利用扫描电镜(SEM)对所合成金刚石的表面形貌进行了表征,测试结果表明,随着合成体系中CH4N2S添加量的逐渐增加,所合成金刚石的表面变得逐渐粗糙.借助傅里叶红外(FT-IR)光谱对金刚石样品内部的氮、氢缺陷以及化学键结构进行了测试分析,结果表明,金刚石中的氢元素以-CH3,-CH2-,C-H形式存在,而其内部的氮杂质以C心、A心形式存在.此外,在3 300~3 600 cm-1观察到NH的吸收带. 相似文献
7.
The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W. 相似文献
8.
在共形光学系统中,椭球形整流罩打破了球形整流罩的旋转对称性,引入了随目标视场变化而变化的动态像差。共形光学设计的主要任务就是消除或者减小椭球形整流罩引入的动态像差,使共形光学系统的成像质量满足使用要求。设计了基于反向旋转位相板的共形光学系统,利用一对反向旋转位相板的反向旋转对目标视场进行动态扫描,利用固定校正器、衍射元件和泽尼克位相板校正了椭球形整流罩引入的动态像差。成像系统采用二次成像的透射式结构,实现了冷光阑效率100%。结果表明:该方法不仅有别于传统扫描方式,而且有效地消除了大长径比的共形光学系统的动态像差。 相似文献
9.
The performance of a double sided silicon strip detector (DSSSD), which is used for the position and energy detection of heavy ions, is reported. The analysis shows that although the incomplete charge collection (ICC) and charge sharing (CS) effects of the DSSSD give rise to a loss of energy resolution, the position information is recorded without ambiguity. Representations of ICC/CS events in the energy spectra are shown and their origins are confirmed by correlation analysis of the spectra from both the junction side and ohmic side of the DSSSD. 相似文献
10.
The cross-sections for ~(46) Ti(n,2 n)~(45) Ti, ~(46) Ti(n,p)~(46 m+g) Sc+~(47) Ti(n,d*)~(46 m+g) Sc, ~(46)Ti(n,p)~(46 m+g) Sc, ~(47) Ti(n,p)~(47) Sc+~(48) Ti(n,d*)~(47) Sc, ~(47) Ti(n,p)~(47) Sc, ~(48) Ti(n,p)~(48) Sc+~(49) Ti(n,d*)~(48) Sc,~(48) Ti(n,p)~(48) Sc, and ~(50) Ti(n,α)~(47) Ca reactions were investigated around neutron energies of 13.5–14.8 Me V by means of the activation technique. Fast neutrons were produced by the~3 H(d,n)~4 He reaction. Neutron energies from different directions in the measurements were obtained in advance using the method of cross-section ratios for ~(90) Zr(n,2 n)~(89 m+g) Zr and ~(93) Nb(n,2 n)~(92 m) Nb reactions. The results obtained are analyzed and compared with the experimental data provided by the literature and verified nuclear data in the JEFF-3.3,CENDL-3.1, ENDF/B-VIII.0 libraries, as well as results calculated by Talys-1.9 code. 相似文献