| Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement |
| |
| 引用本文： | 李秋柱,王楷群,菅傲群,刘鑫,张斌珍.Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement[J].中国物理 B,2010,19(4):47310-047310. |
| |
| 作者姓名： | 李秋柱 王楷群 菅傲群 刘鑫 张斌珍 |
| |
| 作者单位： | National Key Laboratory for Electronic Measurement Technology, North
University of China, Taiyuan 030051, China;Key Laboratory of Instrumentation Science and Dynamic Measurement
(North University of China),
Ministry of Education, Taiyuan {\rm
030051, China;Key Laboratory of Instrumentation Science and Dynamic Measurement
(North University of China),
Ministry of Education, Taiyuan {\rm
030051, China;National Key Laboratory for Electronic Measurement Technology, North
University of China, Taiyuan 030051, China;Key Laboratory of Instrumentation Science and Dynamic Measurement
(North University of China),
Ministry of Education, Taiyuan {\rm
030051, China |
| |
| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant Nos.~50775209 and
50730009). |
| |
| 摘 要： | This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the 110] direction, whose value is determined by Hooke＇s law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I-V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.
|
| 关 键 词： | 光致发光性能 单轴压力 共振隧穿 GaAs 结构 测量 压缩压力 胡克定律 |
| 收稿时间： | 2009-07-29 |
Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement |
| |
| Li Qiu-Zhu,Wang Kai-Qun,Jian Ao-Qun,Liu Xin and Zhang Bin-Zhen.Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement[J].Chinese Physics B,2010,19(4):47310-047310. |
| |
| Authors: | Li Qiu-Zhu Wang Kai-Qun Jian Ao-Qun Liu Xin and Zhang Bin-Zhen |
| |
| Institution: | Key Laboratory of Instrumentation Science and Dynamic Measurement
(North University of China),
Ministry of Education, Taiyuan {\rm
030051, China; National Key Laboratory for Electronic Measurement Technology, North
University of China, Taiyuan 030051, China |
| |
| Abstract: | This paper discusses the $I$--$V$ property of the
GaAs-based resonant tunnelling structure (RTS) under external
uniaxial pressure by photoluminescence studies. Compressive pressure
parallel to the 110] direction, whose value is determined by
Hooke's law, is imposed on the sample by a helix micrometer. With
the increase of the applied external uniaxial compressive pressure,
the blue shift and splitting of the luminescence peaks were
observed, which have some influence on the $I$--$V$ curve of RTS
from the point of view of the energy gap, and the splitting became
more apparent with applied pressure. Full width at half maximum
broadening could also be observed. |
| |
| Keywords: | resonant tunnelling structure $I$--$V$ curve photoluminescence measurement peak shift peak split full width at
half maximum broadening |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
