| Synthesis and characterization of p-type boron-doped IIb diamond large single crystals |
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| 作者姓名： | 李尚升 马红安 李小雷 宿太超 黄国锋 李勇 贾晓鹏 |
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| 作者单位： | School of Materials Science and Engineering,Henan Polytechnic University State Key Laboratory of Superhard Materials,Jilin University |
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| 基金项目： | Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51001042), and the Doctor Foundation of the Henan Polytechnic University, China (Grant No. 2010-32). |
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| 摘 要： | High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K.The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively.The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique.The electrical properties including resistivities,Hall coefficients,Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method.The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized.With the increase of quantity of additive boron,some high-index crystal faces such as {113} gradually disappear,and some stripes and triangle pits occur on the crystal surface.This work is helpful for the further research and application of boron-doped semiconductor diamond.
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| 关 键 词： | boron-doped type-IIb diamond temperature gradient method semiconductor |
| 收稿时间： | 8/4/2010 12:00:00 AM |
Synthesis and characterization of p-type boron-doped IIb diamond large single crystals |
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| Li Shang-Sheng,Ma Hong-An,Li Xiao-Lei,Su Tai-Chao,Huang Guo-Feng,Li Yong and Jia Xiao-Peng.Synthesis and characterization of p-type boron-doped IIb diamond large single crystals[J].Chinese Physics B,2011,20(2):28103-028103. |
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| Authors: | Li Shang-Sheng Ma Hong-An Li Xiao-Lei Su Tai-Chao Huang Guo-Feng Li Yong and Jia Xiao-Peng |
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| Institution: | School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China; State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China |
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| Abstract: | High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as 113 gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. |
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| Keywords: | boron-doped type-IIb diamond temperature gradient method semiconductor |
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