氧化铝与Al（100）基体间界面原子结构研究

本文介绍了用M e v 离子散射和沟道效应研究单晶铝表面无定型氧化层与基体之间界面原子结构的方法, 报道了AI_2_O_3_/ Al ( 1 0 0) 界面原子结构的实验结果.实验表明, 在纯氧气氛围中400 ℃ 下生成的氧化铝膜, 铝和氧原子浓度比例严格为2 与3 之比;AI_2_O_3_ 膜和Al (100)基体之间的界面极其陡峭, 氧化铝膜下Al (1 0 0 ) 基体表面的再构层不大于一个原子层. 由实验测量与用Monte corlo 方法计算结果比较, 得到再构层原子离开原来晶格位置距离为0.18埃. 室温下,Al ( 1 0 0 ) 氧吸附层的元素成份在氧原子覆盖度较低时主要为AlO. 关键词：

STUDIES OF INTERFACE ATOMIC STRUCTURE OF Al_2_O_3_/AI(100) BY MeV ION SCATTERING AND CHANNELING STUDIES OF INTERFACE ATOMIC STRUCTURE OF AL_2_O_3_/AI (100) BY MeV ION SCATTERING AND CHANNELING

The experimental method for studying interface atomic structure between amorphous layer and crystal by MeV ion scattering and channeling is described. This method is applied to study the Al_2_O_3_/AI(100) interface . Thin AI oxide film are formed on clean AI(100) surface in pure oxygen ambience at 400℃. The experimental results show that the composition of the oxide film is precisely Al_2_O_3 and the interface between AI oxide film Al(100) bulk is very sharp, the reconstructive layer under the Al_2_O_3 film is no more than one monolayer. Monte carlo simulations indicate the distance between displaced Al atoms on the reconstructive layer and Al(100) axis is 0.18A. At room temperature, the oxygen adsorption layer of Al(100) is primarily stoichiometric AlO at low surface coverages.
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