Growth and properties of self‐catalyzed (In,Mn)As nanowires |
| |
| Authors: | Alexei Bouravleuv George Cirlin Rodion Reznik Artem Khrebtov Yuriy Samsonenko Peter Werner Ilya Soshnikov Alexander Savin Harri Lipsanen |
| |
| Institution: | 1. St. Petersburg Academic University RAS, St. Petersburg, Russia;2. Ioffe Physical Technical Institute RAS, St. Petersburg, Russia;3. Institute for Analytical Instrumentation RAS, St. Petersburg, Russia;4. ITMO University, St. Petersburg, Russia;5. Peter the Great St. Petersburg Polytechnic University, St.Petersburg, Russia;6. Max Planck Institute of Microstructures Physics, Halle, Germany;7. Department of Applied Physics, Aalto University, Espoo, Finland;8. Department of Micro‐ and Nanosciences, Espoo, Finland |
| |
| Abstract: | Mn‐assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side‐walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
| |
| Keywords: | nanowires diluted magnetic semiconductors (In Mn)As molecular beam epitaxy |
|
|
