A New Method to Prepare Boron Nitride Thin Films |
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作者姓名: | 刘立华 李英爱 冯伟 李卫青 赵春红 王玉新 赵永年 |
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作者单位: | [1]NationalKeyLaboratoryofSuperhardMaterials,JilinUniversity,Changchun130012//CollegeofPhysics,JilinNormalUniversity,Siping136000 [2]NationalKeyLaboratoryofSuperhardMaterials,JilinUniversity,Changchun130012 |
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摘 要: | We report a new method to prepare boron nitride (BN) thin films on Si (100) substrates in an Ar-N2-BCl3-H2 gas system by magnetron arc enhanced plasma chemical vapour deposition. Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize the films. The FTIR spectra show that the deposited boron nitride films experienced a transition from pure h-BN phase to a cubic-containing phase with the variation of arc current ranging from IOA to 18A. The BN film with 42% c-BN was obtained without substrate bias voltage. In the gas system of Ar-N2-BCl3-H2, h-BN can be preferentially etched by chlorine. The chemical etching effect of chlorine allows the formation of c-BN without substrate bias voltage, which may develop a new perspective for the deposition of high quality c-BN film with low stress.
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关 键 词: | 氮化硼薄膜 制备工艺 磁电弧增益等离子体化学蒸气沉积 傅里叶变换 |
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