片状h-CN化合物的高温高压化学合成与表征

 以高温烧结三聚氰胺制得的CNH化合物为C、N源，与分析纯单质硼粉以一定比例混合，在5.0～5.5 GPa、1 400~1 500 ℃高温高压条件下，经化学反应合成了六角硼碳氮（h-BCN）晶体。用傅立叶变换红外光谱（FTIR）和X射线光电子能谱（XPS）对产物进行了表征，结果表明，得到了含碳量较高的六方结构B_0.18C_0.66N_0.16化合物，成分接近于BC₄N，硼、碳、氮是以原子化合的形式存在；XRD分析确定该合成产物具有六角网状结构；SEM测量结果表明，B-C-N晶体具有片状六角形貌，尺寸在1 μm左右。     

Research on the field emission mechanism of nano-structured carbon film

The field emission(FE) characteristics of nano-structured carbon films(NSCFs) are investigated.The saturation behaviour of the field emission current density found at high electric field E cannot be reasonably explained by the traditional Fowler-Nordheim(F-N) theory.A three-region E model and the curve-fitting method are utilized for discussing the FE characteristics of NSCFs.In the low,high,and middle E regions,the FE mechanism is reasonably explained by a modified F-N model,a corrected space-charge-limited-current(SCLC) model and the joint model of F-N and SCLC mechanism,respectively.Moreover,the measured FE data accord well with the results from our corrected theoretical model.     

纳米TiO_2薄膜的结构与光电特性

用射频磁控溅射方法制备出厚度大约15-225nm的TiO2薄膜。Raman光谱测量显示,TiO2薄膜主要是金红石结构(含少量板钛矿相)。紫外可见光吸收光谱表明,在纳米厚度(100nm)范围内,TiO2薄膜的带隙宽度随着薄膜厚度的变化而变化。室温下测量TiO2薄膜的电阻率发现,随着厚度的增加TiO2薄膜的电阻率先后在导体、半导体和绝缘体范围变化。     

A New Method to Prepare Boron Nitride Thin Films

We report a new method to prepare boron nitride (BN) thin films on Si (100) substrates in an Ar-N2-BCl3-H2 gas system by magnetron arc enhanced plasma chemical vapour deposition. Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize the films. The FTIR spectra show that the deposited boron nitride films experienced a transition from pure h-BN phase to a cubic-containing phase with the variation of arc current ranging from IOA to 18A. The BN film with 42% c-BN was obtained without substrate bias voltage. In the gas system of Ar-N2-BCl3-H2, h-BN can be preferentially etched by chlorine. The chemical etching effect of chlorine allows the formation of c-BN without substrate bias voltage, which may develop a new perspective for the deposition of high quality c-BN film with low stress.     

片状h-BCN化合物的高温高压化学合成与表征

以高温烧结三聚氰胺制得的CNH化合物为C、N源,与分析纯单质硼粉以一定比例混合,在5.0~5.5 GPa、1 400~1 500℃高温高压条件下,经化学反应合成了六角硼碳氮(h-BCN)晶体。用傅立叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)对产物进行了表征,结果表明,得到了含碳量较高的六方结构B0.18C0.66N0.16化合物,成分接近于BC4N,硼、碳、氮是以原子化合的形式存在;XRD分析确定该合成产物具有六角网状结构;SEM测量结果表明,B-C-N晶体具有片状六角形貌,尺寸在1μm左右。     

纳米TiO_2薄膜的拉曼光谱

本文测量了纳米TiO2 薄膜的Raman散射谱 ,并用B1g模计算了不同厚度的纳米TiO2薄膜的粒度。结果表明 ,随着膜厚的增加 ,粒度也在增加 ,膜厚达到一定程度后 ,粒度的增加量减少     

金刚石基底上氮化硼薄膜的场发射特性研究

 利用射频磁控溅射方法,在金刚石膜上沉积了氮化硼薄膜。红外光谱分析表明,氮化硼薄膜的结构为六角氮化硼。在超高真空系统中测量了样品的场发射特性,沉积在金刚石膜上的氮化硼薄膜的阈值电场为12 V/μm,最大发射电流密度为272 μA/cm²。并且沉积在金刚石膜上的氮化硼薄膜的场发射特性明显优于金刚石薄膜本身的场发射特性。这说明,氮化硼薄膜可以有效地改善金刚石膜的场发射特性。场发射Fowler-Nordheim（F-N）曲线表明,电子发射是通过遂穿表面势垒完成的。     

Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

The excellent physical and chemical properties of cubic boron nitride(c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon(100) substrates by radio frequency(RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-μm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H_2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed.     

锂基触媒体系中不同形状立方氮化硼晶体的高压合成

采用高温高压方法,以六角氮化硼(hBN)为原料、选用氮化锂(Li3N)、氢化锂+氮化锂(LiH+Li3N)、氢化锂(LiH)、氢化锂+氨基锂(LiH+LiNH2)、氮化锂+氨基锂(Li3N+LiNH2)为触媒,在合适的温度、压力及生长工艺条件下,分别得到了厚板状、类球形、八面体或六八面体、扁锥状和片状六边形形貌立方氮化硼(cBN)晶体。总结了不同锂基触媒/添加剂对合成的cBN晶体形貌变化的影响。     

用射频磁控溅射法在c-BN晶体基底上生长c-BN薄膜

本文用射频磁控溅射方法在片状c-BN晶体基底上生长了c-BN薄膜,显微拉曼光谱(μ-RS)和扫描电子显微镜(SEM)测试结果表明:沉积的薄膜是大约10μm厚、高结晶性、电子透明的高纯c-BN薄膜.岛状和层状生长模式在试验中清晰的展示出来.同时在生长的c-BN薄膜内部和被遮盖的基底部分上发现了籽晶.