Angular-resolved energy distribution of secondary ions emitted from a silicon target sputtered by a xenon ion beam

This paper reports preliminary results obtained on an experimental apparatus dedicated to the study of angular resolved energy distribution of particles emitted from a sputtered target. Secondary ions emitted during the bombardment of a silicon target by xenon ions at a primary energy of 10keV have been studied. In its low energy part the distribution reaches a maximum around 8eV, and then decreases according to an E ^–1 law. In the range 200eV to 1000eV, a second maximum appears whose height depends on the emission angle. Apart from this range, the angular distributions have a cosine square-like shape. On the contrary, the angular distribution of ions with energy between 200eV and 1000eV is pointed in a forward direction near the specular reflection direction of the ion beam. It is assumed that the measured ions correspond to two ionic populations: secondary ions sputtered according to the linear cascade theory and recoil silicon target ions.