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Ga束流低温辅助清理GaAs衬底表面氧化物的研究
引用本文:李占国,刘国军,尤明慧,李林,李辉,冯明,李梅,高欣,李联合.Ga束流低温辅助清理GaAs衬底表面氧化物的研究[J].光学学报,2011(10):153-157.
作者姓名:李占国  刘国军  尤明慧  李林  李辉  冯明  李梅  高欣  李联合
作者单位:长春理工大学高功率半导体激光国家重点实验室;吉林大学公共计算机教学与研究中心;
基金项目:国家自然科学基金(61006039,60979056)资助课题
摘    要:采用低流量Ⅲ族Ga束流在分子束外延中低温辅助清理GaAs衬底表面氧化物.采用高能电子衍射监控衬底表面氧化物清理过程并得出氧化物清理速率及氧化层对高能电子的吸收系数.根据清理速率对衬底温度依赖的Arrhenius关系,估算了Ga辅助清理过程中发生化学反应所需要的活化能.Ga束流辅助清理衬底表面氧化物技术在外延生长中具有实...

关 键 词:光电子学  Ga辅助清理  高能电子衍射  InAs量子点

Investigation of Ga-Assisted Desorption of Native Surface Oxide on GaAs Substrate
Li Zhanguo Liu Guojun You Minghui Li Lin Li HuiFeng Ming Li Mei Gao Xin Li Lianhe.Investigation of Ga-Assisted Desorption of Native Surface Oxide on GaAs Substrate[J].Acta Optica Sinica,2011(10):153-157.
Authors:Li Zhanguo Liu Guojun You Minghui Li Lin Li HuiFeng Ming Li Mei Gao Xin Li Lianhe
Institution:Li Zhanguo1 Liu Guojun1 You Minghui1 Li Lin1 Li Hui1Feng Ming2 Li Mei1 Gao Xin1 Li Lianhe1(1National Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,Jilin 130022,China 2Public Center for Computer Teaching and Research,Jilin University,Jilin 130000,China)
Abstract:Ga-assisted desorption of native surface oxide on GaAs substrate is investigated at low substrate temperature.The progress is monitored by reflection high energy electron diffraction(RHEED),and time dependence of RHEED intensity curves is recorded by a CCD camera.By fitting the curves,the oxide desorption rates are deduced,which depend strongly on the substrate temperature and can be fitted well by Arrhenius relationship.Furthermore,the absorption coefficients of the oxide layer to the high energy electron ...
Keywords:optoelectronics  Ga-assisted cleanup  high energy electron diffraction  InAs quantum dots  
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