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Structural,photoluminescent, and dielectric properties of Eu3+-doped Ba0.7Sr0.3TiO3 thin films
Institution:State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
Abstract:Eu3+-doped Ba0.7Sr0.3TiO3 thin films were prepared by a chemical solution deposition method and characterized by X-ray diffraction, field emission scanning electron microscopy, photoluminescence and dielectric measurements. The thin films were well crystallized with a pure perovskite structure. A contraction of the unit cell was observed upon incorporation of Eu3+ ions below 2 mol%, while an expansion occurred as the Eu3+ concentration was further increased above 2 mol%, indicating that Eu3+ ions with different concentrations occupied different lattice sites. Photoluminescence spectra showed two prominent transitions of Eu3+ ions at 594 nm (5D0 → 7F1) and 618 nm (5D0 → 7F2) upon excitation at 395 nm (7F0 → 5L6). There existed two quenching concentrations at 2 mol% and 4 mol% due to different lattice sites of the Eu3+ ions. We also investigated the dielectric properties of the thin films. Our study suggests that Eu3+-doped Ba0.7Sr0.3TiO3 thin films have potential applications in multifunctional optoelectronic devices.
Keywords:Thin films  Chemical solution deposition  Photoluminescence  Dielectric  Lattice site
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