Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures |
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| Authors: | RL Mascorro Alquicira JL Casas Espinola E Velázquez Lozada G Polupan L Shcherbyna |
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| Institution: | 1. ESFM – Instituto Politécnico Nacional, México D.F. 07738, Mexico;2. ESIME – Instituto Politécnico Nacional, México D.F. 07738, Mexico;3. V. Lashkarev Institute of Semiconductor Physics at NASU, Kiev, Ukraine |
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| Abstract: | The photoluminescence (PL), its temperature dependence and X ray diffraction (XRD) have been studied in the symmetric In0.15Ga0.85As/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs), obtained with the variation of QD growth temperatures (470–535 °C). The increase of QD growth temperatures is accompanied by the enlargement of QD lateral sizes (from 12 up to 28 nm) and by the shift non monotonously of PL peak positions. The fitting procedure has been applied for the analysis of the temperature dependence of PL peaks. The obtained fitting parameters testify that in studied QD structures the process of In/Ga interdiffusion between QDs and capping/buffer layers takes place partially. However this process cannot explain the difference in PL peak positions. |
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| Keywords: | Quantum dot structures Photoluminescence Emission inhomogeneity Compressive strain |
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