| Epitaxial Growth of Graphene on 6H-SiC （0001） by Thermal Annealing |
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| 引用本文： | 唐军,刘忠良,康朝阳,潘海斌,韦世强,徐彭寿,高玉强,徐现刚.Epitaxial Growth of Graphene on 6H-SiC （0001） by Thermal Annealing[J].中国物理快报,2009(8):363-365. |
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| 作者姓名： | 唐军 刘忠良 康朝阳 潘海斌 韦世强 徐彭寿 高玉强 徐现刚 |
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| 作者单位： | [1]National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 [2]State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 50872128 and 50802053. |
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| 摘 要： | An epitaxial graphene （EG） layer is successfully grown on a Si-terminated 6H-SiC （（9001） substrate by the method of thermal annealing in an ultrahigh vacuum molecular beam epitaxy chamber. The structure and morphology of the EG sample are characterized by reflection high energy diffraction （RHEED）, Raman spectroscopy and atomic force microscopy （AFM）. Graphene diffraction streaks can are clearly observed in the Raman spectrum. The AFM about 4-10 layers. be seen in RHEED. The G and 2D peaks of graphene results show that the graphene nominal thickness is
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| 关 键 词： | 热退火 SiC 石墨 外延生长 反射高能电子衍射 原子力显微镜 拉曼光谱 分子束外延 |
Epitaxial Growth of Graphene on 6H-SiC （0001） by Thermal Annealing |
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| TANG Jun,LIU Zhong-Liang,KANG Chao-Yang,PAN Hai-Bin,WEI Shi-Qiang,XU eeng-Shou.＊,GAO Yu-Qiang,XU Xian-Gang.Epitaxial Growth of Graphene on 6H-SiC （0001） by Thermal Annealing[J].Chinese Physics Letters,2009(8):363-365. |
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| Authors: | TANG Jun LIU Zhong-Liang KANG Chao-Yang PAN Hai-Bin WEI Shi-Qiang XU eeng-Shou＊ GAO Yu-Qiang XU Xian-Gang |
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| Institution: | 1 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 2.State Key Laboratory of CrystaJ Materials, Shandong University, Jinan 250100) |
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