Laser–MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser |
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| Authors: | S-J An WI Park G-C Yi S Cho |
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| Institution: | (1) Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea, KR;(2) Department of Physics, University of Ulsan, Ulsan 680-749, Korea, KR |
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| Abstract: | High-quality ZnO thin films were grown on single-crystalline Al2O3(0001) and amorphous SiO2/Si(100) substrates at 400–640 °C using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG
laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al2O3(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04° and the films on SiO2/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence
(PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown
on Al2O3(0001) and SiO2/Si(100) were 3 and 18 meV, respectively.
Received: 8 May 2001 / Accepted: 18 September 2001 / Published online: 20 December 2001 |
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| Keywords: | PACS: 81 15 Fg 81 05 Dzl 78 55Et |
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