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Photoluminescence study in step-graded composition InxAl1−xAs/GaAs |
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| Authors: | N Yahyaoui S Aloulou A Sfaxi |
| Institution: | a Equipe de Spectroscopie Raman Faculté des Sciences de Tunis, Campus Universitaire, Elmanar, 2092 Tunis, Tunisia b Laboratoire de Photovoltaïque et des Semiconducteurs, Institut National de Recherche Scientifique et Technique, BP.95, Hammam-Lif 2050, Tunisia c Laboratoire de Physique des Semiconducteurs, Faculté des Sciences de Monastir, Monastir, Tunisia |
| Abstract: | We report on the lattice-mismatched growth of step-graded InxAl1−xAs buffer layers on GaAs (0 0 1) substrates by molecular beam epitay (MBE). The approach to growing highly lattice-mismatched epilayers is to interpose a buffer layer between the substrate and the active layer. Two samples G30 and G40 with active layer compositions, respectively, x = 0.46 and x = 0.41, are studied by photoluminescence (PL). At low temperature, the PL spectra show a large broadened band whose energy and intensity depend on the active layer composition. The step-graded layer compositions improved the crystalline quality of these structures and increase the active layer PL band intensity. |
| Keywords: | Photoluminescence Dislocation Lattice-mismatch Graded composition |
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