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Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD |
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| Authors: | Yinzhen Wang Shunquan Wang Shengming Zhou Jiandong Ye Rong Zhang |
| Institution: | a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China b School of Physics & Telecommunication Engineering, South China Normal University, China c Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China d Department of Biomedical Engineering, Shanghai Jiao-Tong University, Shanghai 200240, China e Graduate School of Chinese Academy of Science, Beijing 100039, China |
| Abstract: | The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (α-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates is given. |
| Keywords: | 81 05 Dz 81 40 &minus z |
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