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Crystalline quality of 3C-SiC formed by high-fluence C-implanted Si |
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| Authors: | S Intarasiri A Hallén J Jensen K Bertilsson S Singkarat |
| Institution: | a Institute for Science and Technology Research and Development, Chiang Mai University, Chiang Mai 50200, Thailand b FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand c Royal Institute of Technology, Department of Microelectronics & Information Technology, SE-164 40 Kista-Stockholm, Sweden d Department of Engineering Sciences, Uppsala University, SE-751 21 Uppsala, Sweden e The Ångström Laboratory, Division of Ion Physics, Uppsala University, SE-751 21 Uppsala, Sweden f Department of Information Technology and Media, Mid-Sweden University, SE-851 70 Sundsvall, Sweden |
| Abstract: | Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 1017 ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 °C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the poly-crystalline SiC. |
| Keywords: | 61 72 Ss 61 72 Tt 78 30 &minus j 61 10 Nz 68 37 Lp |
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