Hybrid magnetic transistor |
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Authors: | Michelle S Meruvia Ivo A Hümmelgen Rosamaria WC Li Jonas Gruber |
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Institution: | a Group of Organic Optoelectronic Devices, Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990 Curitiba, PR, Brazil b Instituto de Química, Universidade de São Paulo, C.P. 26077, 05513-970 São Paulo, SP, Brazil |
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Abstract: | We report the development of a hybrid semiconductor-metal-semiconductor permeable-base transistor in vertical architecture. This transistor has a p-type silicon collector, a thin tin layer as base and a magnetoresistive conjugated polymer, poly(9,9-dioctyl-1,4-fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal, independently of the magnetic field in the investigated range. |
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Keywords: | 75 47 &minus m 72 80 Le 85 70 &minus w |
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