| Ga1—xAlxAs外延片有源区Al组份的测定方法 |
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| 引用本文： | 刘学彦.Ga1—xAlxAs外延片有源区Al组份的测定方法[J].发光学报,1998,19(4):361-363. |
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| 作者姓名： | 刘学彦 |
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| 作者单位： | 中国科学院长春物理研究所 |
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| 摘 要： | 由于ＧａＡｓ与ＡｌＡｓ晶格常数相近，ＧａＡｓ晶格常数为０．５６５３５ｎｍ，ＡｌＡｓ的晶格常数为０．５６６０５ｎｍ，当固熔体中Ａｌ组份ｘ值从０变到１时，晶格常数变化约为０．１５％．因此，在ＧａＡｓ衬底上生长Ｇａ１－ｘＡｌｘＡｓ时，在界面处的失配位错少，...
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| 关 键 词： | 外延材料 电致发光 x值 镓铝砷 铝组分 |
A MEASURABLE METHOD OF ALUMINIUM COMPOSITE OF Ga 1- x Al x As EPITAXIAL MATERIAL WITHIN ACTIVE REGION |
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| Liu Xueyan.A MEASURABLE METHOD OF ALUMINIUM COMPOSITE OF Ga 1- x Al x As EPITAXIAL MATERIAL WITHIN ACTIVE REGION[J].Chinese Journal of Luminescence,1998,19(4):361-363. |
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| Authors: | Liu Xueyan |
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| Abstract: | In this paper emitting specta of Ga 1- x Al x As material in active region is measured using eletroluminescence. The x values region is obtained from formulation. The method has accurate, quick and simple excellence. It is good measure method for middle measurement of product. |
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| Keywords: | Ga 1- x Al x As epitaxial material electroluminescence x values |
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