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Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers
作者姓名:夏正月  韩培高  徐骏  陈德媛  韦德远  马忠元  陈坤基  徐岭  黄信凡
作者单位:National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
基金项目:Supported by the National Natural Science Foundation of China under Nos 60425414, 50472066, 90301009 and 10574069, the Natural Science Foundation of Jiangsu Province (BK2006715), and the National Basic Research Programme of China under Grant No 2007CB613401.
摘    要:

关 键 词:钝化作用  发光  Si/SiO2  多层结构
收稿时间:2007-3-16
修稿时间:2007-03-16

Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers
XIA Zheng-Yue,HAN Pei-Gao,XU Jun,CHEN De-Yuan,WEI De-Yuan,MA Zhong-Yuan,CHEN Kun-Ji,XU Ling,HUANG Xin-Fan.Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers[J].Chinese Physics Letters,2007,24(9):2657-2660.
Authors:XIA Zheng-Yue  HAN Pei-Gao  XU Jun  CHEN De-Yuan  WEI De-Yuan  MA Zhong-Yuan  CHEN Kun-Ji  XU Ling  HUANG Xin-Fan
Institution:National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Abstract:Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.
Keywords:73  21  Ac  73  21  La  78  55  -m
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