Structural,thermal, optical and conductivity studies of Co/ZnO nanoparticles doped CMC polymer for solid state battery applications

In this study, a simple chemical precipitation method was used to synthesize ZnO: Co²⁺ as nanoparticles. The solution casting technique was used for the preparation of polymer films of Carboxymethyl cellulose (CMC) doped with different contents (0.5, 1.5, 3, and 5 wt%) of ZnO/Co NPs. As shown by the X-ray diffraction, the average size of ZnO/Co crystallite of the NPs is 25.6 nm. Meanwhile, the addition of ZnO/Co reduced the semi-crystallinity of CMC. The Fourier transform infrared (FTIR) confirmed the interaction between the ZnO/Co NPs and the polymer CMC. The direct and indirect band gap (Eg) was reduced from (5.32–5.01 eV and 5.20 to 4.99 eV respectively) with the increase in ZnO/Co NPs content up to 3 wt% after this content the Eg is increased as shown by the UV–Vis spectra. In addition, the results of TGA displayed the decomposition of the nanocomposite to be little compared to that of the pure CMC indicating the success of fabrication of products. The improvement of the ionic conductivity was noticed upon the addition of ZnO/Co NPs into the polymer CMC system which can be explained in terms of an increase in amorphicity as shown by the impedance spectroscopic study. It was found that the optimum ionic conductivity (3.209 × 10⁻⁶ Scm⁻¹) at ambient temperature was higher for the sample containing 1.5 wt% ZnO/Co NPs with highest of amorphicity and the lowest total loss of weight. Therefore, the improvements in optical properties, thermal stability, and AC conductivity which were observed represent a strong support for the use of the nanocomposite films in the solid state battery applications.     

Magnetic properties of stuffed copper chromium tellurides Cu1+xCr2+yTe4 (x=0-1, y<0.3)

We present a detail study of the effect of excess metal atoms on the magnetic properties of Cu_1+xCr_2+yTe₄ at 2-400 K. With the increase in x=0-1 and y<0.3, these compounds retain metallic behavior, while ferromagnetic ordering temperature reduces from 325 to 160 K. Our low field susceptibility χ_ac measurements reveal a second transition on cooling below the ferromagnetic ordering; the transition at around 160-180 K intensifies with the excess amount of copper and chromium atoms. The value of spontaneous magnetization at 2 K remains between 2.6 and 2.9μ_B across all the compositions and it reduces with temperature as M(T)∼A₀T^3/2+A₁T^5/2, as expected for the excitation of Bloch's spin waves in a model of the Heisenberg ferromagnet. Our terminal composition Cu_1.9Cr_2.25Te₄ showed only second transition at 160 K with short range magnetic order much above the transition temperature and in the absence of the specific heat jump at this temperature. The magnetic properties are explained as a result of random magnetic anisotropy in the excess-metal compositions induced by the interstitial atomic defects in their parent spinel structure. The large stuffing of cations has been made possible in the telluride compounds because of the large size of tellurium and also by the covalent bonding that stabilizes the defect structure.     

Structural and electrical studies of Ba5RTi3V7O30 (R=Ho,Gd, La) compounds

The ferroelectric ceramics Ba₅RTi₃V₇O₃₀ (R=Ho, Gd, La) have been synthesized by solid-state reaction technique. Preliminary X-ray structural analysis confirmed a single-phase formation of the compound in orthorhombic structure. Surface morphology of the compounds was studied by scanning electron microscopy (SEM). Detailed studies of electrical properties (i.e., dielectric constant, loss tangent, ac conductivity) as a function of temperature (RT-773 K) and at four different frequencies (1 kHz, 10 kHz, 100 kHz and 1 MHz) show ferroelectric–paraelectric phase transition of the compounds of diffuse-type. The activation energy has been evaluated from ac conductivity following Arrhenius equation. The conductivity pattern shows that it is strongly frequency dependent and obeys Jonscher's power relation.     

The effect of gamma irradiation on electrical and dielectric properties of Al-TiW-Pd2Si/n-Si Schottky diode at room temperature

The effects of ⁶⁰Co (γ-ray) irradiation on the electrical and dielectric properties of Al-TiW-Pd₂Si/n-Si Schottky diodes (SDs) have been investigated by using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature and 500 KHz. The corrected capacitance and conductance values were obtained by eliminating the effect of series resistance (R_s) on the measured capacitance (C_m) and conductance (G_m) values. The high-low frequency capacitance (CHF-CLF) method given in [12] as N_ss = (1/qA) [((1/C_LF) − (1/C_ox))⁻¹ −  ((1/C_HF) − (1/C_ox))⁻¹] was successfully adapted to the before-after irradiation capacitance given in this report as N_ss = (1/qA) [((1/C_bef) − (1/C_ox))⁻¹ − ((1/C_after) − (1/C_ox))⁻¹] for the analyzing the density of interface states. The N_ss-V plots give a distinct peak corresponding to localized interface states regions at metal and semiconductor interface. The experimental values of the ac electrical conductivity (σ_ac), the real (M′) and imaginary (M″) parts of the electrical modulus were found to be strong functions of radiation and applied bias voltage, especially in the depletion and accumulation regions. The changes in the dielectric properties in the depletion and accumulation regions stem especially from the restructuring and reordering of the charges at interface states and surface polarization whereas those in the accumulation region are caused by series resistance effect.     

The influence of interlayer exchange coupling on magnetic ordering in Fe/V superlattices

The relation between the interlayer exchange coupling and magnetic order is addressed, using Fe/V(0 0 1) superlattices as a model system. Large decrease in the ordering temperature (T_c) is observed with decreasing interlayer exchange coupling. The effective exponents of the magnetization were determined to be larger than 0.5 for all the samples, which is strongly deviating from the classical values of both two- and three-dimensional systems. This effect can partially be ascribed to the presence of boundaries, invoked by the finite number of magnetic layers.     

Double peaks on ac magnetization in a superconducting Pb-porous glass nanocomposite

Studies of temperature dependences of ac magnetization were carried out for a superconducting lead-porous glass nanocomposite. Double peaks were found on the imaginary part of ac magnetization which were accompanied with double steps on the real part. The lower-temperature anomalies in ac magnetization differed noticeably when they were obtained upon cooling and warming. The double peaks were treated as two phase transitions in the vortex system: the liquid-solid transition which occurs close to the onset of superconductivity and solid-solid one which is triggered by superconductivity in confined lead islands.     

Bi induced step-flow growth in the homoepitaxial growth of Au(1 1 1)

Homoepitaxial growth of Au on Bi-covered Au(1 1 1) was studied at room temperature using reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). From observations of RHEED it is found that the Au(1 1 1) (23 × 1) reconstruction structure changes to a (1 × 1) by about 0.16-0.5 ML deposition of Bi and to a (2√3 × 2√3)R30° by about 1.0 ML deposition of Bi, respectively. The surface morphology evolution by Bi deposition leads to a change of Au homoepitaxial growth behavior from layer-by-layer to step flow. This indicates that the surface diffusion distance of Au atoms on the Bi-precovered (1 × 1) and (2√3 × 2√3)R30° surfaces is longer than that on the Au(1 1 1) (23 × 1) clean surfaces. A strong surface segregation of Bi was found at top of surface. It is concluded that Bi atoms acted as an effective surfactant in the Au homoepitaxial growth by promoting Au intralayer mass transport.     

Nanocrystalline Tin‐Oxide Modified Electrodes and their Electrochemical Characterization

Nanocrystalline tin‐oxide particles were prepared as electrodes on the bases of ITO glass and AT‐cut quartz crystals (sputtered gold), respectively, and characterized for their electrochemical behavior. Experiments suggested that the SnO₂ particles could induce an energy barrier to the redox reactions taking place on the electrode surface. When the amount of SnO₂ exceeded ca. 10^?7 mol cm^?2, electrochemical activity demonstrated by the solution redox couples was entirely suppressed. Nevertheless, electrochemical impedance spectroscopic (EIS) measurements suggested that mutual communication between redox couples would still take place on the surface of SnO₂. For instance, although the CV curves of Fe(CN)₆^3‐/4‐ were completely blocked, the exchange current of Fe(CN)₆^3‐/4‐ could still flow through the tin‐oxide modified electrode, increasing with its concentration up to 40 mM. The propagation of electrons in the SnO₂ film was likely via a hopping mechanism. Electrochemical quartz microbalance (EQCM) measurements, in addition, suggested that a charge‐compensating cation (K⁺ or H⁺) uptake reaction may be induced as electrons were pumped to the Sn0₂ electrode, while, if electrons were removed, that could cause water desorption. Analysis based on the Frumkin adsorption isotherm showed the driving force behind the adsorption of water on SnO₂ is about ?2 kcal/mol. Nonetheless, the adsorbed water might face a competitive repulsion from acetonitrile when acetonitrile was used as the electrolyte medium.