| Evolution of Photocurrent during Coadsorption of Cs and O on GaAs （100） |
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| 引用本文： | 邹继军,常本康,杨智,杜晓晴,高频,乔建良.Evolution of Photocurrent during Coadsorption of Cs and O on GaAs （100）[J].中国物理快报,2007,24(6):1731-1734. |
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| 作者姓名： | 邹继军 常本康 杨智 杜晓晴 高频 乔建良 |
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| 作者单位： | [1]Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094 [2]Department of Electronic Engineering, East China Institute of Technology, Fuzhou 344000 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 60678043, and the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20050288010. |
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| 摘 要： | The photocurrent and spectral response characteristics of gallium arsenide （GaAs） are obtained by a multiinformation measurement system, and the evolution of the photocurrent versus the Cs：O flux ratio is investigated. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent are different for different samples. These differences are analysed, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent.
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| 关 键 词： | 光电流 铯 外光电效应 电子学 |
| 收稿时间： | 2006-12-11 |
| 修稿时间： | 2006-12-11 |
Evolution of Photocurrent during Coadsorption of Cs and O on GaAs (100) |
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| ZOU Ji-Jun,CHANG Ben-Kang,YANG Zhi,DU Xiao-Qing,GAO Pin,QIAO Jian-Liang.Evolution of Photocurrent during Coadsorption of Cs and O on GaAs (100)[J].Chinese Physics Letters,2007,24(6):1731-1734. |
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| Authors: | ZOU Ji-Jun CHANG Ben-Kang YANG Zhi DU Xiao-Qing GAO Pin QIAO Jian-Liang |
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| Institution: | l Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 2100942Department of Electronic Engineering, East China Institute of Technology, Fuzhou 344000 |
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| Abstract: | The photocurrent and spectral response characteristics of gallium arsenide (GaAs) are obtained by a multi-information measurement system, and the evolution of the photocurrent versus the Cs:O flux ratio is investigated. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent are different for different samples. These differences are analysed, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent. |
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| Keywords: | 78 66 Fd 79 60 Dp 68 43 De |
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