首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   75篇
  免费   18篇
  国内免费   4篇
化学   53篇
晶体学   2篇
物理学   42篇
  2023年   1篇
  2021年   1篇
  2020年   2篇
  2019年   3篇
  2018年   2篇
  2017年   1篇
  2016年   4篇
  2015年   5篇
  2014年   6篇
  2013年   6篇
  2012年   10篇
  2011年   2篇
  2010年   4篇
  2009年   5篇
  2008年   2篇
  2007年   4篇
  2006年   5篇
  2005年   3篇
  2004年   2篇
  2003年   6篇
  2002年   5篇
  2001年   2篇
  2000年   3篇
  1999年   1篇
  1998年   1篇
  1997年   5篇
  1995年   3篇
  1994年   1篇
  1992年   2篇
排序方式: 共有97条查询结果,搜索用时 78 毫秒
1.
A platform technology for the creation of spatially resolved surfaces encoded with a monolayer consisting of different metal complexes was developed. The concept entails the light‐triggered activation of a self‐ assembled monolayer (SAM) of UV‐labile anchors, that is, phenacylsulfides, and the subsequent cycloaddition of selected diene‐functionalized metal complexes at defined areas on the surface. The synthesis and characterization of the metal complexes for the UV‐light assisted anchoring on the surface and a detailed study of a short‐chain oligomer model system in solution confirm the high efficiency of the photoreaction. The hybrid materials obtained by this concept can potentially be utilized for the design of highly valuable catalytic or (opto‐)electronic devices.  相似文献   
2.
A new series of copolymer poly(N‐hexadecylmeth acrylamide‐co‐bis(anthracen‐9‐ylmethyl) 2‐allylmalonate) [poly(HDMA‐co‐DAnMAMA)]s containing swallow‐tailed double anthracenyl groups and long alkyl group are designed and synthesized. The main route of the photochemical reaction of the p(HDMA‐DAnMAMA)copolymer Langmuir–Blodgett (LB) films is dimerization reaction between the anthracenyl groups under the irradiation of both 365 and 248 nm for limiting irradiation time, resulting to a fine negative‐tone pattern. On the other hand, the anthracenyl groups act just as photodecomposition group under 248 nm for longer irradiation time, resulting to a fine positive‐tone pattern. Consequently, positive‐tone and negative‐tone pattern are obtained by choosing not only a suitable irradiation light wavelength, but the irradiation time at 248 nm. Moreover, it is found that the exposed and unexposed regions of copolymer LB films irradiated at 248 nm have solubility differentiation in gold etchant (I2/NH4I/C2H5OH/H2O), that is to say, the gold photopatterns with the maximal resolution of the used mask can be obtained easily without any development process. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 50: 139–147, 2012  相似文献   
3.
A powerful new strategy for the fabrication of high‐density RNA arrays is described. A high‐density DNA array is fabricated by standard photolithographic methods, the surface‐bound DNA molecules are enzymatically copied into their RNA complements from a surface‐bound RNA primer, and the DNA templates are enzymatically destroyed, leaving behind the desired RNA array. The strategy is compatible with 2′‐fluoro‐modified (2′F) ribonucleoside triphosphates (rNTPs), which may be included in the polymerase extension reaction to impart nuclease resistance and other desirable characteristics to the synthesized RNAs. The use and fidelity of the arrays are explored with DNA hybridization, DNAzyme cleavage, and nuclease digestion experiments.  相似文献   
4.
结合“自上而下”和“自下而上”技术构建微纳米器件是目前纳米科学和技术领域追逐的目标之一。本文首先采用硅氢化反应在硅表面共价偶联引发聚合的活性基团,接着实施表面原子转移自由基聚合(ATRP)反应形成高分子刷poly(PEGMA),采用“自上而下”的光刻技术在硅表面制备功能化的图案,最后利用“自下而上”的DNA自组装技术在图案部分原位生长DNA纳米管。上述组装过程通过多次透射反射红外光谱、凝胶电泳、透射电镜和扫描电镜进行了检测,证实了硅芯片表面定位生长DNA纳米管的可行性。  相似文献   
5.
Photodegradable polymers constitute an emerging class of materials that finds numerous applications in biotechnology, biomedicine, and nanoscience. This article highlights some of the emerging applications of photodegradable polymers in the form of homopolymers, particles and self‐assembled constructs in solution, hydrogels for tissue engineering, and photolabile polymers for biopatterning applications. Novel photochemistries have been combined with controlled polymerization methods, which result in well‐defined photodegradable materials that exhibit light mediated and often controlled fragmentation processes.  相似文献   
6.
Development-free vapor photolithography (DFVP) is a unique all-dry pattern transfer technique, which is based on the reaction of SiO2 with HF vapor under a polymer film in the presence of accelerators at a temperature of above 100°C. In this paper, we found that the etching reaction could be catalyzed by superacids. Based on this discovery, a novel, chemically amplified, development-free vapor photolithography technique was developed, and has benn successfully applied to power electronic device manufacture.  相似文献   
7.
The possibility of fabricating focusators of infrared laser radiation, based on photolithographic technology, is analysed. The realizability of focusator fabrication is based on the possibility of producing a set of binary photomasks and achieving the necessary depth of etching the substrate of the pattern while forming the microrelief. The possibility of producing these photomasks is evaluated with regard to the focusator's extremal zone width and the appearance of photomasks displayed on the screen. Forming of step-by-step microrelief is achieved using plasma etching or wet etching and depends on the minimum element's dimension and the etching depth. Examples of the microrelief's profiles, of focusators fabricated using photolithography, and the result of the transformation of a focusator's radiation into a straight line segment, are discussed.  相似文献   
8.
纳米计量与原子光刻技术分析   总被引:1,自引:0,他引:1       下载免费PDF全文
张文涛  李同保 《应用光学》2006,27(3):242-245
为了说明原子光刻(Atom Lithography)在纳米计量及传递作用中的特殊地位,首先对纳米计量标准及其现状进行了简要介绍,提出纳米计量中原子光刻的基本概念和优势,结合原子光刻实验装置对原子光刻技术的工作机理进行了分析。结果表明,可以通过原子光刻技术得到纳米量级刻印条纹,为纳米计量及标准传递提供更加精确的手段。最后对常见的2种原子光刻技术——沉积型原子光刻和虚狭缝型原子光刻进行了阐述,指出2者的不同之处,为不同条件下原子光刻提供了一定的借鉴。  相似文献   
9.
厚胶光刻非线性畸变的校正   总被引:3,自引:0,他引:3  
利用厚胶光刻技术制作大深度微结构元件是一种有效的途径,但厚胶光刻过程中的非线性畸变对光刻面形质量的严重影响限制了该技术的应用,基于此,提出了一种对掩模透射率函数进行校正的方法。分析空间像形成及其在光刻胶内传递、曝光、显影等过程中非线性因素的影响,利用模拟退火算法对掩模透射率函数进行校正,以提高光刻面形质量,并以凹面柱透镜为例,给出了校正前后的显影轮廓模拟结果,其校正后浮雕面形的体积偏差仅为2.63%。该方法在有效改善面形质量的同时,并没有引起掩模的设计、制作难度及费用增加,这对于设计、制作高质量的微结构元件有重要意义。  相似文献   
10.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号