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排序方式: 共有76条查询结果,搜索用时 15 毫秒
1.
Duy-Thach PhanGwiy-Sang Chung 《Applied Surface Science》2011,257(9):4339-4343
Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k2) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C. 相似文献
2.
基于有限元理论,给出了基于ANSYS提取单相单向换能器(Single Phase Unidirectional Transducers,SPUDT)耦合模参数的方法。首先,结合声表面波在压电介质中的传播原理,给出了压电有限元分析方程和对应的ANSYS分析步骤。然后针对SPUDT结构,给出了周期性近似分析的理论模型,利用耦合场分析对其进行模态分析和谐响应分析,最后结合两者的结果来计算SPUDT的耦合模参数。本文给出基底材料为压电晶体128°YX-LiNbO3和YZ-LiNbO3,电极材料为铝的三种不同SPUDT的计算结果,理论结果与Hashimoto和Hartmann文献报道的结果相吻合,并且和实验测试的结果基本一致。从而给出了提取SPUDT耦合模参数的一种通用、有效的方法。 相似文献
3.
声表面波用压电晶体的新进展 总被引:1,自引:1,他引:0
报道了我们在Li2B4O7、Sr3Ga2Ge4O14、LiNbO3、LiTaO3等声表面波用压电晶体材料方面的最新研究进展.采用改进型坩埚下降法成功生长了直径3~4英寸的Li2B4O7晶体,并实现了批量生产.作为硅酸镓镧系列新型压电晶体之一,Sr3Ga2Ge4O14晶体具有最大的压电系数.报道了直径2英寸Sr3Ga2Ge4O14晶体的生长结果,测试了该晶体的压电性能.在CO2(90;)、H2(10;)混合气氛中,分别在700℃和450℃下对LN和LT晶片进行化学还原处理,成功制备了3英寸LN和LT低静电黑片,不仅减少了器件制作工序,而且使成品率提高了5~8百分点.此外,在密封坩埚中生长了低静电LiNbO3晶体,观察到一些新的现象. 相似文献
4.
This study described relative humidity (RH) sensing using a graphene/128° YX LiNbO3 surface acoustic wave (SAW) device. The resonant frequency of the device decreased in a two-stage manner as the RH increased. For a low RH range (RH < 50%), a frequency downshift of 1.38 kHz per 1% RH change was observed. This was attributed to mass loading of the SAW propagation surface due to the adsorption of water molecules by the graphene surface. For a high RH range (RH > 50%), a frequency downshift of 2.6 kHz per 1% RH change was obtained, which was due to the change in elastic grapheme properties. The mass loading effect of the water layer was less effective at high temperature, resulting in a lower temperature coefficient of resonant frequency (TCF). 相似文献
5.
A simulation study of Rayleigh wave devices based on a stacked AlN/SiO2/Si(1 0 0) device was carried out. Dispersion curves with respect to acoustic phase velocity, reflectivity and electromechanical coupling efficiency for tungsten W and aluminium Al electrodes and different layer thicknesses were quantified by 2D FEM COMSOL simulations. Simulated acoustic mode shapes are presented. The impact of these parameters on the observed Rayleigh wave modes was discussed. High coupling factors of 2% and high velocities up to 5000 m/s were obtained by optimizing the AlN/SiO2 thickness ratio. 相似文献
6.
《Current Applied Physics》2014,14(4):608-613
This paper reports Sezawa-mode surface acoustic wave (SAW) devices with via-isolated cavity to construct the allergy biosensor. To fabricate Sezawa-mode SAW devices, the RF magnetron sputtering method for the growth of piezoelectric ZnO thin films are adopted and influences of the sputtering parameters are investigated. The optimal substrate temperature of 300 °C, RF power of 120 W and sputtering pressure of 2 Pa were used to deposit piezoelectric ZnO films with a smooth surface, uniform grain size and strongly c-axis-orientated crystallization. A back-etched SAW resonator is used in this study. The wet etching of (100)-oriented silicon wafers is used to form a back-side cavity which is critical to the formation of a hopper cavity for holding bio-analytes. The remaining membrane structure silicon thickness was 25 μm. In this report, the chrome (Cr, 12 nm)/gold (Au, 66 nm) layer was initially deposited onto the sensing area of SAW devices as the binding layer for biochemical sensor. The resonance frequency of the Sezawa-mode SAW device is 1.497 GHz. The maximum sensitivity of the Sezawa-mode is calculated to be 4.44 × 106 cm2/g for human immunoglobulin-E (IgE) detection. The stability for human IgE detection is calculated to be 80% and the variation of the stability ±3% was obtained after several tests. 相似文献
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9.
The generation of ultrasound in film–substrate system by a laser line source is studied in the case of ablation mechanism, which can be realized by adding a liquid layer at the excitation point. The time domain displacement can be yielded by the numerical jointed inversed Laplace–Fourier transformation technique. The typical surface acoustic waves (SAW) of two layer structures, slow film on fast substrate and fast film on slow substrate, are obtained and the effect of the propagation distance and the thickness of the film on the SAW are given. 相似文献
10.
This paper presents the simulation of surface acoustic wave (SAW)-induced absorption coefficient and refractive index change in InGaAs-GaAs multiple quantum well (MQW) structures operating near 980 nm. The exciton problem is solved in two dimensional momentum space to include the non-axial effect due to strain induced valance band mixing and nonparabolicity. The optical absorption coefficient and refractive index changes near the band gap in the MQWs are calculated as a function of SAW power. 相似文献