Role of Cu-doping in CdTe thin films: Experiments and simulations

Due to its outstanding physical properties, CdTe is used to fabricate high efficiency solar cells. However, its high work function poses a challenge, and hence, to fabricate an efficient CdTe-based solar cell, Cu-doping may be useful. Here, we present the role of temperature-dependent Cu-doping in radio frequency sputter-deposited CdTe films and the related changes occurring in their optical, electrical, structural and microstructural properties. For instance, Cu-doping at different temperatures leads to an increase in the grain size and a reduction in the optical reflectance with increasing temperature. In addition, Kelvin probe force microscopy measurements reveal that the work function is found to be smaller corresponding to the annealing temperature of 473 K, whereas resistivity measurements show that it decreases with increasing temperature (the lowest value of resistivity is found to be 1.8 × 10⁻² Ω-cm). To understand the electronic structure of CdTe before and after Cu-doping, we have carried out first-principles density functional theory (DFT) simulation, which reveals a strong hybridization among Cu, Cd and Te atoms. This study paves the way to fabricate efficient Cu-doped CdTe-based solar cells.     

双靶向CdTe量子点的制备及其在细胞标记中的应用

以巯基乙酸和巯基乙酰肼为稳定剂,制备了酸度敏感型CdTe量子点。经与抗体链接,该量子点具备酸度敏感、免疫识别双重靶向功能。经荧光光谱分析、透射电镜图像及细胞免疫成像证明,抗体已成功链接于量子点表面,且该量子点具有酸度敏感及抗体识别的双重靶向功能,可以实现对肿瘤细胞的特异性标记。     

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (I_sc = 2.09 A), power conversion efficiency (η = 15%), and quantum efficiency (QE~85%) were achieved at a carrier lifetime of 1 × 10³ μs and a doping concentration of 1 × 10¹⁷ cm⁻³ of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 μm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.     

(Yb3+, Mn2+) Co-doped CdTe nanocrystals with enhanced quantum yields and red-shift emission

We prepared the nanocrystals (NCs) of CdTe, CdTe:Yb, and CdTe:Yb, Mn vis water phase synthesis and examined their structural, morphological, and optical properties. All NCs have a particle diameter of about 2–4 nm, and the monodispersed, uniform spherical, cubic structure of the CdTe NC remains largely unchanged after the doping with Yb and Mn. According to the X-ray diffraction results, the CdTe, CdTe:Yb, and CdTe:Yb, Mn NCs all have a cubic structure, and the diffraction peak of CdTe:Yb NC is at a lower 2θ angle compared with that of the CdTe NC. With the CdTe NC as the reference, the UV–Vis absorption of the CdTe:Yb and the CdTe:Yb, Mn NCs exhibits a blueshift and a redshift, and the emission of CdTe:Yb and CdTe:Yb, Mn has a blueshift of about 12 nm and a redshift of about 73 nm, respectively. The CdTe:Yb, Mn NCs have higher quantum yields than the CdTe:Yb NC, and the quantum yield is the highest when CdTe is doped with 1:1 Mn²⁺/Yb³⁺. In addition, both the CdTe:Yb and CdTe:Yb, Mn NCs have a shorter fluorescence lifetime than the CdTe NC.     

Effect of thickness of CdTe/Ge heterojunction photodetectors on optoelectronic properties

The influence of the thickness of CdTe/n-Ge heterojunction photodetectors on I–V curves was studied experimentally and theoretically. The thicknesses of the CdTe thin films were 110, 130, 150, and 200 nm. The power intensity of illumination was 150 mW/cm². Increasing the thickness led to an increase in photocurrent.     

Synthesis of the wheat-like CdSe/CdTe thin film heterojunction and their photovoltaic applications

We report on the fabrication of wheat-like CdSe/CdTe thin film heterojunction solar cells made using a simple electrochemical deposition method and close-spaced sublimation technology on indium tin oxide (ITO) substrates. Structural, optical, and electrical properties of the wheat-like CdSe/CdTe thin film junctions were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), energy dispersive spectrometry (EDS), ultraviolet–visible (UV–vis) absorption spectrum and Keithley 2400 analysis. A significant red-shift of the absorption edge is observed in this heterojunction. The heterostructure is composed of the wheat-like CdSe array and CdTe thin film, showing optical properties typical of type II heterostructures that are suited for photovoltaic applications. A photocurrent density of 8.34 mA/cm² has been obtained under visible light illumination of 100 mW/cm². This study demonstrates that the electrochemical deposition and the close-spaced sublimation technology, which are easily adapted to other chemical systems, are promising techniques for large-scale fabrication of low-cost heterojunction solar cells.     

Stable structure and effects of sulfur in CdTe/CdS heterojunctions

Structural and electronic properties of S in the CdTe/CdS(0001) interface are studied using the density functional theory. The interstitial S atom may induce the inversion of the surface Cd atoms and sublayer Te atoms of the Cd‐terminated surface, while S atoms may adsorb at the top sites, substitute Te atoms or accumulate at the voids inside the Te‐terminated (111) CdTe surface. Isovalent substituting S for Te in the CdTe(111)/CdS(0001) heterojunctions can reduce the strain arising from lattice mismatch and cause a reduction of interface states, so it may be better for solar cells. Copyright © 2011 John Wiley & Sons, Ltd.     

3-巯基异丁酸衍生物对碲化镉量子点水相合成的影响

为探索适宜制备粒径分布窄、荧光量子产率高、发光区域在红光至近红外光区段的量子点的巯基酸的条件, 我们研究了三类3-巯基异丁酸(MIBA)衍生物在以亚碲酸钠为碲源的水相法水热制备CdTe量子点中的影响. 这三类衍生物包括设计合成的主链亲水性衍生物3-巯基异丁酰甘氨酸(MIBGly)、3-巯基异丁酰-3-氨基丙酸(MIBAPA)和3-巯基异丁酰天冬氨酸(MIBAsp), 支链亲水性衍生物N-乙酰基半胱氨酸(ACys)和支链疏水性衍生物3-巯基-2-甲基丁酸(MMBA)和3-巯基-2,2-二甲基丙酸(MDMPA). 以这三类MIBA 衍生物为修饰剂时,CdTe量子点均能够保持MIBA体系较窄的荧光半峰宽. 采用亲水性的MIBA衍生物(MIBGly、MIBAPA、MIBAsp和ACys)比采用疏水性的MIBA衍生物(MMBA和MDMPA)更有利于制备发射波长较长的量子点. 采用支链亲水性的MIBA衍生物((ACys)比采用主链亲水性的MIBA衍生物(MIBGly、MIBAPA和MIBAsp)更容易获得高荧光量子产率的量子点.     

CdTe量子点-铜酞菁复合体系荧光共振能量转移的研究

以波长为780 nm、重复频率为76 MHz、脉宽为130 fs的飞秒激光作为激发光源, 采用超快时间分辨光谱技术研究了CdTe量子点-铜酞菁复合体系的荧光共振能量转移. 实验结果表明, 在780 nm的双光子激发条件下, 复合体系中CdTe量子点的荧光寿命随着铜酞菁溶液浓度的增加而减少, 荧光共振能量转移效率增加. 同时也研究了激发功率对荧光共振能量转移效率的影响. 结果表明, 随着激发光功率的增加, 复合体系溶液中CdTe量子点的荧光寿命增加, 荧光共振能量转移效率减小, 其物理机理是因为高激发功率下的热效应和由双光子诱导的高阶激发态的跃迁. 当激发光功率为200 mW时, 双光子荧光共振能量转移效率为43.8%. 研究表明CdTe量子点-铜酞菁复合体系是非常有潜力的第三代光敏剂.     

室温水相合成CdTe/CdS核/壳结构量子点

开发了一种以聚乙烯吡咯烷酮为分散剂和稳定剂经条件温和的室温水相合成光谱可调的水溶性CdTe/CdS核/壳结构量子点的方法:向新鲜制备的CdTe量子点溶液中加入硫源,继续反应即可生成CdS壳层,通过控制硫源的浓度即可控制CdS壳层厚度,从而调节光谱性质和增强稳定性.采用XRD、TEM、HRTEM、荧光光谱以及紫外-可见光...