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1.
郝哲 《力学与实践》2004,26(3):27-29
针对柱面注浆方式,研究了有关渗透注浆的单孔复注及不同方式布孔时多孔注浆的相互影响等问题,推导出一些有价值的岩体注浆理论公式,可用于指导现场注浆工程的设计与施工.  相似文献   
2.
We argue that if black hole entropy arises from a finite number of underlying quantum states, then any particular such state can be identified from infinity. The finite density of states implies a discrete energy spectrum, and, in general, such spectra are non-degenerate except as determined by symmetries. Therefore, knowledge of the precise energy, and of other commuting conserved charges, determines the quantum state. In a gravitating theory, all conserved charges including the energy are given by boundary terms that can be measured at infinity. Thus, within any theory of quantum gravity, no information can be lost in black holes with a finite number of states. However, identifying the state of a black hole from infinity requires measurements with Planck scale precision. Hence observers with insufficient resolution will experience information loss. First Award in the 2006 Essay Competition of the Gravity Research Foundation.  相似文献   
3.
Within the large literature on inter-organizational networks, there has been some discussion of linking-pin organizations and the role they play in integrating these networks. Based on this verbal specification of linking-pin organizations, we construct operational criteria and empirical methods for identifying these structurally important organizations in potentially large and complex inter-organizational networks. These methods are based on ideas drawn from blockmodeling, structural holes, centrality and centralization of networks, and identifying cut-points in networks. These methods are applied to a constructed example and then to real empirical inter-organizational networks. Implications and contrasts with other methods are discussed, together with some open problems.  相似文献   
4.
Depending on various assumptions on the energy scale of inflation and assuming a primordial power spectrum of a step‐like structure, we explore new possibilities for Primordial Black Holes (PBH) and Planck relics to contribute substantially to Cold Dark Matter in the Universe. A recently proposed possibility to produce Planck relics in four‐dimensional string gravity is considered in this framework. Possible experimental detection of PBHs through gravitational waves is also explored. We stress that inflation with a low energy scale, and also possibly when Planck relics are produced, leads unavoidably to relics originating from PBHs that are not effectively classical during their formation, rendering the usual formalism inadequate for them.  相似文献   
5.
IntroductionIndium-tin-oxide(ITO) has been widely used asthe anode material in organic light-emitting devices(OLEDs) because of its high transmittance in the visi-ble region and low electrical resistivity. In the pastyears, many investigations focused on …  相似文献   
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7.
In this Letter, we construct the quasi-normal modes of three-dimensional extremal black holes in an algebraic way. We show that the infinite towers of the quasi-normal modes of scalar, vector and tensor could be constructed as the descendents of the highest weight modes. Our investigation shows that the hidden conformal symmetry suggested in Chen et al. (2010) [5] is an intrinsic property of the extremal black hole. Moreover, we notice that we need to fix the freedom in defining the local vector fields and find the right hidden conformal symmetry to obtain the physical quasi-normal modes.  相似文献   
8.
In this paper we consider the generalized uncertainty principle in the tunneling formalism via Hamilton–Jacobi method to determine the quantum-corrected Hawking temperature and entropy for 2+12+1-dimensional noncommutative acoustic black holes. In our results we obtain an area entropy, a correction logarithmic in leading order, a correction term in subleading order proportional to the radiation temperature associated with the noncommutative acoustic black holes and an extra term that depends on a conserved charge. Thus, as in the gravitational case, there is no need to introduce the ultraviolet cut-off and divergences are eliminated.  相似文献   
9.
Halogen bonding is a noncovalent interaction that is receiving rapidly increasing attention because of its significance in biological systems and its importance in the design of new materials in a variety of areas, for example, electronics, nonlinear optical activity, and pharmaceuticals. The interactions can be understood in terms of electrostatics/polarization and dispersion; they involve a region of positive electrostatic potential on a covalently bonded halogen and a negative site, such as the lone pair of a Lewis base. The positive potential, labeled a σ hole, is on the extension of the covalent bond to the halogen, which accounts for the characteristic near‐linearity of halogen bonding. In many instances, the lateral sides of the halogen have negative electrostatic potentials, allowing it to also interact favorably with positive sites. In this discussion, after looking at some of the experimental observations of halogen bonding, we address the origins of σ holes, the factors that govern the magnitudes of their electrostatic potentials, and the properties of the resulting complexes with negative sites. The relationship of halogen and hydrogen bonding is examined. We also point out that σ‐hole interactions are not limited to halogens, but can also involve covalently bonded atoms of Groups IV–VI. Examples of applications in biological/medicinal chemistry and in crystal engineering are mentioned, taking note that halogen bonding can be “tuned” to fit various requirements, that is, strength of interaction, steric factors, and so forth.  相似文献   
10.
方忠慧  江小帆  陈坤基  王越飞  李伟  徐骏 《中国物理 B》2015,24(1):17305-017305
Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(~6.2 V)is much larger than that due to full charged electrons(~1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.  相似文献   
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