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利用半导体工艺和器件仿真软件silvaco TCAD(Technology Computer Aided Design),模拟研究了采用硅/硅锗合金(silicon/silicon germanium alloy,Si/Si_(1-x)Ge_x)量子阱结构作为吸收层的薄膜晶体硅异质结太阳电池各项性能.模拟结果显示,长波波段光学吸收随锗含量的增加而增加,而开路电压则因Si_(1-x)Ge_x)层带隙的降低而下降.锗含量为0.25时,短路电流密度的增加补偿了开路电压的衰减,效率提升0.2%.氢化非晶硅/晶体硅(a-Si:H/c-Si)界面空穴密度以及Si_(1-x)Ge_x)量子阱的体空穴载流子浓度制约着空穴费米能级的位置,进而影响到开路电压的大小.随着锗含量增加,a-Si:H/c-Si界面缺陷对开压的影响降低,Si_(1-x)Ge_x)量子阱的体缺陷对开压的影响则相应增加.高效率含Si_(1-x)Ge_x)量子阱结构的硅异质结太阳电池的制备需要a-Si:H/c-Si界面缺陷的良好钝化以及高质量Si_(1-x)Ge_x)量子阱的生长. 相似文献
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Shaoqing Xiao 《固体与材料科学评论》2014,39(4):277-317
High-efficiency Si solar cells have attracted great attention from researchers, scientists, engineers of photovoltaic (PV) industry for the past few decades. Many researchers, scientists, and engineers in both academia and industry seek solutions to improve the cell efficiency and reduce the cost. This desire has drawn stronger support from major funding agencies and industry and stimulated a growing number of major research and research infrastructure programs, and a rapidly increasing number of publications in this filed. This article reviews materials, devices, and physics of high-efficiency Si solar cells developed over the last 20 years and presents representative examples of superior performances and competitive advantages. In this paper there is a fair number of topics, not only from the material viewpoint, introducing various materials that are required for high-efficiency Si solar cells, such as base materials (FZ-Si, CZ-Si, MCZ-Si, and multi-Si), emitter materials (diffused emitter and deposited emitter), passivation materials (Al-BSF, high-low junction, SiO2, SiOx, SiNx, Al2O3 and a-Si:H), and other functional materials (antireflective layer, transparent conductive oxide and metal electrode), but also from the device and physics point of view, elaborating on physics, cell concept, development, and status of most types of high-efficiency Si solar cells, including passivated emitter and rear contact (PERC), passivated emitter and rear locally diffused (PERL), passivated emitter and rear totally-diffused (PERT), Pluto, PANDA, interdigitated back-contacted (IBC), emitter-wrap-through (EWT), metallization-wrap-through (MWT), heterojunction with intrinsic thin-layer (HIT), and so on. Finally, the technical data of these high-efficiency Si solar cells has been tabulated. 相似文献
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