Photosensitive organic-inorganic hybrid structures based on porous silicon

Abstract

In this study, the photovoltaic organic-inorganic structures were created by deposition of poly(3,4-ethylenedioxythiophene) film doped by poly(styrenesulfonate) and reduced graphene oxide on the porous silicon/silicon substrate. Formation of the hybrid structure was confirmed by means of atomic-force microscopy and Fourier transform infrared spectroscopy. The current-voltage characteristics of the obtained structures were studied. It was found the increase of electrical conductivity and photo-induced signal in organic-inorganic structures. Temporal parameters and spectral characteristics of photoresponse in the 400–1100?nm wavelength range were investigated. The widening of spectral photosensitivity in a short-wavelength range due to light absorption in various layers of the multijunction structure in comparison with single crystal silicon was revealed.     

Synthesis of photoreactive polyimide having indan structure

Polyimide containing an indan unit and alkyl moiety with a high molecular weight was prepared from 5,7‐diamino‐1,1,4,6‐tetramethylindan and 3,3′,4,4′‐benzophenone tetracarboxylic dianhydride. This polyimide was amorphous and soluble in common organic solvents, such as tetrahydrofuran, chloroform, and cyclopentanone. Thermogravimetry of the polyimide showed good thermal stability, indicating that a 10% weight loss of the polyimide was observed at 500 °C in nitrogen. The glass‐transition temperature of the polyimide was not observed by DSC measurement between room temperature and 400 °C at a heating rate of 10 °C/min (Apparatus: DSC3100 MAC Science Co., Ltd.). Transparency of the polyimide at 365 nm was 80%. The polyimide acted as a photosensitive resist of negative type by UV radiation. The resist had a sensitivity of 31 mJ/cm² and a contrast of 2.3 when it was developed with cyclopentanone at room temperature. © 2001 John Wiley & Sons, Inc. J Polym Sci Part A: Polym Chem 40: 423–428, 2002     

Hydrogen-Related Paramagnetic Centers in Ge-Doped Sol-Gel Silica Induced by γ-Ray Irradiation

We have studied the generation mechanisms of H(II) paramagnetic centers in Ge-doped silica by investigating up to 10⁴ mol ppm sol-gel Ge-doped silica materials. We have considered materials with the same concentrations of Ge but that are produced by two different densification routes that give rise to different concentrations of Ge-related oxygen deficient centers (GeODC(II)). These centers are characterized by an optical absorption band at ∼5.2 eV (B_2β band) and two related emissions at ∼3.2 eV and ∼4.3 eV. The GeODC(II) content was estimated by absorption and emission measurements. The H(II) centers were induced by room temperature γ-ray irradiation and their concentration was determined by electron paramagnetic resonance measurements. The comparison between the two kinds of materials, obtained by different preparations, shows that the GeODC(II) concentration increases with the Ge content and is enhanced by vacuum densification. The comparison of irradiated samples shows that beyond the already known process of conversion of preexisting GeODC(II) into H(II) centers, another generation process of H(II) centers is effective that involves irradiation induced GeODC(II).     

Electro-optic effect,propagation loss,and switching speed in polymers containing nano-sized droplets of liquid crystal

Polymers containing droplets of liquid crystal smaller than 100 nm, which have good transparency and easily form films, were prepared under various conditions to evaluate their potential as electro-optic materials for waveguide-type devices. By varying the liquid crystal concentration and the strength of the UV irradiation causing photo-induced phase separation of the droplets, we were able to control the droplet size and density. We have clarified how the birefringence generated in an applied electric field, switching speed, and optical loss of light propagating in the film depend on droplet size and density. Polymer materials having a large electro-optic effect (δn = 0.001 at 8 V μm^-1), low propagation loss (~2.5 dB cm^-1), and fast response time (~10 μs) have been developed.     

Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films

In this paper, the effect of bismuth doping on the structural, morphological, optical and electrical properties of Cu₂ZnSnS₄ (CZTS) films has been investigated. The undoped and bismuth doped CZTS films (0, 0.5, 1, 1.5 and 2 mol%) were deposited on glass substrates by solution based method. The XRD result shows a significant improvement in the crystallinity of the films with increase in bismuth concentration. The Raman spectra of the films show the dominant peak at 334 cm^–1 corresponding to A₁ vibrational mode of CZTS kesterite phase. The FESEM micrographs of the films show an enhancement in the grain size and densification with the addition of bismuth ion concentration. The optical bandgap of the films was found to vary (1.59–1.40 eV) with the doping of bismuth ions. The I –V characteristics indicate twofold increment in the photoconductivity for the bismuth doped CZTS films under 100 mW/cm² illumination suggesting their potential application in photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Photosensitive Materials for Integrated Optic Applications

Abstract

This article presents results of device fabrication using UV processing of materials and integrated optic components produced by flame hydrolysis deposition and hybrid sol-gel technology. Photosensitive materials were employed in the fabrication of channel waveguides and channel photo-imprinted waveguides incorporating Bragg gratings through single and double-step exposure.     

双亲性无规共聚物P（VM-co-AMPS）的自组装及其性能

以2-丙烯酰胺基-2-甲基丙磺酸（AMPS）和苯乙烯类光敏单体7-（4-乙烯基苄氧基）-4-甲基香豆素（VM）为共聚单体,采用自由基聚合法制备了光敏性双亲共聚物P（VM-co-AMPS）。P（VM-co-AMPS）在溶剂水中自组装胶束化,用原子力显微镜（AFM）表征了自组装胶体粒子的形态、粒径及其分布。紫外光照使胶体粒子中香豆素基元发生光二聚反应,用紫外-可见光分光光度计（UV-Vis）跟踪其光二聚交联过程,用光学显微镜考察了胶体粒子的乳化性能。结果表明：胶体粒子具有较好的紫外吸收性能和较好的乳化性能。该胶束制备工艺简单,条件温和,避免了溶剂的使用。     

Technological significance of sol-gel process and process-induced variations in sol-gel materials and coatings

A significant aspect of sol-gel technology is the capability it provides to affect the substructure of materials by controlling the nature and the kinetics of chemical reactions. This capability allows us to produce novel materials, design unique molecular and pore morphologies, circumvent high-temperature reactions, and modify material properties. The modifications include strongly thermodynamic-dependent high-temperature properties such as sintering, crystallization, and viscosity in glass and ceramic materials. A particularly exciting area for investigation is the optical-electronic field, where a significant dependence of electro-optical properties and photosensitivity on process-induced molecular-structural variations occurs. Understanding the basis for the creation of structural variations in sol-gel processes should have significant impact on the technologies and systems that use these materials. In this article, some fundamental aspects of alkoxide-based, sol-gel processes and thermochemical bases for process-induced structural variates are discussed.     

Fabrication of High Reflection UVWritten Fiber Bragg Gratings

l.IntroductionFibergratingshaveattractedanincreasingamountofattentionsineeG.Meltz[1Jandhisco-workersfirstdemonstratedinl989thatPermanentgratingscouldbewrittenbyex-peinganoPticalfiberfromthesidetotwointerferingbeamsofultraviolet(UV)light.Inrecentyears,avastresearchefforthasbeendevotedtoopticalfiberBragggratingsallovertheworld.Theirsimplicity,usefu1nesscoupledtotheiruniqueproPertiesandnu-merousadvantagesmakethemidealforawiderangeofimPOrtantapplicationsinopticalfibertelecommunications,lasersa…     

Crystal growth,electrical and photophysical properties of Tl<Subscript>2</Subscript>S layered single crystals

The Tl₂S compound was prepared in a single crystal form using a special local technique, and the obtained crystals were analysed by X-ray diffraction. For the resultant crystals, the electrical properties (electrical conductivity and Hall effect) and steady-state photoconductivity were elucidated in this work. The electrical measurements extend from 170 to 430 K, where it was found that σ _⊥ = 8.82 × 10⁻⁵ Sm⁻¹ when current flow direction makes right angle to the cleavage plane of the crystals. In the same range of temperatures, it was found that σ _‖ = 4.73 × 10⁻⁵ Sm⁻¹ when the current flow is parallel to the cleavage plane. In line with the investigated range of temperatures, the widths of the band gaps were calculated and discussed as also the results of the electrical conductivity and Hall effect measurements. In addition, the anisotropy of the electrical conductivity (σ _⊥/σ _‖) for the obtained crystals was also studied in this work. Finally the photosensitivity was calculated for different levels of illumination as a result of the photoconductivity measurements, which showed that the recombination process in Tl₂S single crystals is a monomolecular process.